The dispersive Fourier transform (DFT) technique opens a fascinating pathway to explore ultrafast non-repetitive events and has been employed to study the build-up process of mode-locked lasers. However, the shutting process for t

In this article, we report on an experimentally generated soliton and bound-state soliton passively mode-locked erbium-doped fiber laser by incorporating a saturable absorber (SA) made of MoS2/fluorine mica (FM) that was fabricate

We report, to the best of our knowledge, the first demonstration of solid-state optical refrigeration of a Ho-doped material. A 1 mol% Ho-doped yttrium lithium fluoride (YLF) crystal is cooled by mid-IR laser radiation, and its ex

Open quantum and wave systems can exhibit non-Hermitian degeneracies called exceptional points, where both the eigenvalues and the corresponding eigenstates coalesce. Previously, such exceptional points have been investigated in d

Solar-blind photodetectors are of great interest to a wide range of industrial, civil, environmental, and biological applications. As one of the emerging ultrawide-bandgap semiconductors, gallium oxide (Ga2O3) exhibits unique adva

Full-color displays based on micro light-emitting diodes (μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring (NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tuned from green

All-dielectric metamaterials have emerged as a promising platform for low-loss and highly efficient terahertz devices. However, existing fabrication methods have difficulty in achieving a good balance between precision and cost. H

We present a conformal metamaterial with simultaneous optical transparency and broadband millimeter-wave absorption for a curved surface. By tailoring the reflection response of meta-atoms at oblique angles, it is possible to achi

It is well known that the p-type AlGaN electron blocking layer (p-EBL) can block hole injection for deep ultraviolet light-emitting diodes (DUV LEDs). The polarization induced electric field in the p-EBL for [0001] oriented DUV LE

Near-infrared germanium (Ge) photodetectors monolithically integrated on top of silicon-on-insulator substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from sensing and

Transparent conductive oxides have attracted escalating research interest for integrated photonic devices and metasurfaces due to the extremely large electro-optic modulation of the refractive index by the free-carrier-induced pla

1.2 μJ pulses with average power of 9 W were directly generated from a passively mode-locked picosecond oscillator based on a Nd:GdVO4 bulk crystal. Short cavity operation in continuous wave and mode-locking regimes was conducted

The ability to control the energy transfer in rare-earth ion-doped luminescent materials is very important for various related application areas such as color display, bio-labeling, and new light sources. Here, a phase-shaped femt