Photonics Research
Co-Editors-in-Chief
Siyuan Yu
2013
Volume: 1 Issue 2
6 Article(s)
Raphael Tsu, and Michael A. Fiddy

We revisit the electrodynamics of resonant high-Q interactions in atomic systems with a view to gaining insights into the design of meta-atoms and hence bulk metamaterials with profoundly different electromagnetic responses. The r

Jul. 19, 2013
  • Vol. 1 Issue 2 02000077 (2013)
  • Hao Tu... Lixia Xi, Xiaoguang Zhang, Xia Zhang, Jiachuan Lin and Wan Meng|Show fewer author(s)

    The factors that influence the generation of a high-quality optical frequency comb (OFC) based on a recirculating frequency shifter (RFS) due to the maximum output power and noise figure of Er-doped fiber amplifier (EDFA) are stud

    Jul. 19, 2013
  • Vol. 1 Issue 2 02000088 (2013)
  • Alexandre Goy, and Demetri Psaltis

    We present imaging experiments in focusing Kerr media using digital holography and digital reverse propagation (DRP) of the wave. For moderate power, the nonlinear DRP algorithm can be used to improve the quality of images over th

    Jul. 19, 2013
  • Vol. 1 Issue 2 02000096 (2013)
  • Zabih Ghassemlooy... Paul Anthony Haigh, Francesco Arca, Sandro Francesco Tedde, Oliver Hayden, Ioannis Papakonstantinou and Sujan Rajbhandari|Show fewer author(s)

    This paper presents an experimental demonstration of a visible light communications link with an light emitting diode and a low-bandwidth organic photodetector as transmitter and receiver, respectively, that achieves sub 4 Mbits/s

    Jul. 19, 2013
  • Vol. 1 Issue 2 02000065 (2013)
  • Jean Armstrong

    In this paper, we describe a new type of digital-to-analog converter (DAC) for optical wireless communication. Conversion occurs in the optical rather than the electrical domain. The overall intensity of the light transmitted by a

    Jul. 19, 2013
  • Vol. 1 Issue 2 02000092 (2013)
  • E. Kasper... M. Kittler, M. Oehme and T. Arguirov|Show fewer author(s)

    Germanium tin (GeSn) is a group IV semiconductor with a direct band-to-band transition below 0.8 eV. Nonequilibrium GeSn alloys up to 20% Sn content were realized with low temperature (160°C) molecular beam epitaxy. Photodetectors

    Jul. 19, 2013
  • Vol. 1 Issue 2 02000069 (2013)
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