UV light has been utilized by people in numerous critical applications for over 100 years. However, mainstream UV emitters and detectors are often bulky and inefficient. Recently, large investment and progress have been made by institutions and companies around the world to create and improve semiconductor materials, structures, and devices for more efficient generation and manipulation of UV light with a much smaller footprint and better reliability. This feature issue will cover modeling, experimentation, and applications related to UV photonics research and its applications.
This feature issue in Photonics Research will serve as a venue for the most recent publications in the increasingly popular research area of semiconductor ultraviolet (UV) photonics, which has found broad applications in sterilization, communication, sensing, curing, medical treatment, and national security.
The semiconductor UV photonics research has emerged as one of the most heavily invested areas among semiconductor photonics research due to numerous crucial applications such as sterilization, sensing, curing, and communication. T
We report on AlGaN-based tunnel heterojunctions grown by metalorganic vapor phase epitaxy enabling fully transparent UVC LEDs by eliminating the absorbing p-AlGaN and p-GaN layers. Furthermore, the electrical characteristics can b
The impact of operation current on the degradation behavior of 310 nm UV LEDs is investigated over 1000 h of stress. It ranges from 50 to 300 mA and corresponds to current densities from 34 to 201 A/cm2. To separate the impact of
The low modulation bandwidth of deep-ultraviolet (UV) light sources is considered as the main reason limiting the data transmission rate of deep-UV communications. Here, we present high-bandwidth III-nitride micro-light-emitting d
In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated. With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved v
This paper reviews and introduces the techniques for boosting the light-extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV: λ<300 nm) light-emitting diodes (LEDs) on the basis of the discussion of their molecular str
The nanorod structure is an alternative scheme to develop high-efficiency deep ultraviolet light-emitting diodes (DUV LEDs). In this paper, we first report the electrically injected 274-nm AlGaN nanorod array DUV LEDs fabricated b
In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imagi