Photonics Research
Co-Editors-in-Chief
Xiaohang Li, Russell D. Dupuis, and Tim Wernicke
Vol. 7, Issue , 2019
Editor(s): Xiaohang Li, Russell D. Dupuis, and Tim Wernicke
Year: 2019
Status: Published

UV light has been utilized by people in numerous critical applications for over 100 years. However, mainstream UV emitters and detectors are often bulky and inefficient. Recently, large investment and progress have been made by institutions and companies around the world to create and improve semiconductor materials, structures, and devices for more efficient generation and manipulation of UV light with a much smaller footprint and better reliability. This feature issue will cover modeling, experimentation, and applications related to UV photonics research and its applications.

This feature issue in Photonics Research will serve as a venue for the most recent publications in the increasingly popular research area of semiconductor ultraviolet (UV) photonics, which has found broad applications in sterilization, communication, sensing, curing, medical treatment, and national security.

Contents 8 article(s)
Semiconductor UV photonics: feature introduction
Xiaohang Li... Russell D. Dupuis and Tim Wernicke|Show fewer author(s)

The semiconductor UV photonics research has emerged as one of the most heavily invested areas among semiconductor photonics research due to numerous crucial applications such as sterilization, sensing, curing, and communication. T

Photonics Research
Dec. 01, 2019, Vol. 7 Issue 12 120SUVP1 (2019)
MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs
Christian Kuhn... Luca Sulmoni, Martin Guttmann, Johannes Glaab, Norman Susilo, Tim Wernicke, Markus Weyers and Michael Kneissl|Show fewer author(s)

We report on AlGaN-based tunnel heterojunctions grown by metalorganic vapor phase epitaxy enabling fully transparent UVC LEDs by eliminating the absorbing p-AlGaN and p-GaN layers. Furthermore, the electrical characteristics can b

Photonics Research
Apr. 29, 2019, Vol. 7 Issue 5 050000B7 (2019)
Current-induced degradation and lifetime prediction of 310  nm ultraviolet light-emitting diodes
Jan Ruschel... Johannes Glaab, Batoul Beidoun, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Arne Knauer, Markus Weyers, Sven Einfeldt and Michael Kneissl|Show fewer author(s)

The impact of operation current on the degradation behavior of 310 nm UV LEDs is investigated over 1000 h of stress. It ranges from 50 to 300 mA and corresponds to current densities from 34 to 201 A/cm2. To separate the impact of

Photonics Research
Jun. 24, 2019, Vol. 7 Issue 7 07000B36 (2019)
1 Gbps free-space deep-ultraviolet communications based on III-nitride micro-LEDs emitting at 262 nmOn the Cover
Xiangyu He... Enyuan Xie, Mohamed Sufyan Islim, Ardimas Andi Purwita, Jonathan J. D. McKendry, Erdan Gu, Harald Haas and Martin D. Dawson|Show fewer author(s)

The low modulation bandwidth of deep-ultraviolet (UV) light sources is considered as the main reason limiting the data transmission rate of deep-UV communications. Here, we present high-bandwidth III-nitride micro-light-emitting d

Photonics Research
Jun. 24, 2019, Vol. 7 Issue 7 07000B41 (2019)
Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection
Weizong Xu... Yating Shi, Fangfang Ren, Dong Zhou, Linlin Su, Qing Liu, Liang Cheng, Jiandong Ye, Dunjun Chen, Rong Zhang, Youdou Zheng and Hai Lu|Show fewer author(s)

In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated. With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved v

Photonics Research
Jul. 15, 2019, Vol. 7 Issue 8 08000B48 (2019)
Review of encapsulation materials for AlGaN-based deep-ultraviolet light-emitting diodes
Yosuke Nagasawa, and Akira Hirano

This paper reviews and introduces the techniques for boosting the light-extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV: λ<300 nm) light-emitting diodes (LEDs) on the basis of the discussion of their molecular str

Photonics Research
Aug. 01, 2019, Vol. 7 Issue 8 08000B55 (2019)
Deep ultraviolet light-emitting diodes based on well-ordered AlGaN nanorod array
Liang Zhang... Yanan Guo, Jianchang Yan, Qingqing Wu, Yi Lu, Zhuohui Wu, Wen Gu, Xuecheng Wei, Junxi Wang and Jinmin Li|Show fewer author(s)

The nanorod structure is an alternative scheme to develop high-efficiency deep ultraviolet light-emitting diodes (DUV LEDs). In this paper, we first report the electrically injected 274-nm AlGaN nanorod array DUV LEDs fabricated b

Photonics Research
Aug. 15, 2019, Vol. 7 Issue 9 09000B66 (2019)
Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films
C. Trager-Cowan... A. Alasmari, W. Avis, J. Bruckbauer, P. R. Edwards, B. Hourahine, S. Kraeusel, G. Kusch, R. Johnston, G. Naresh-Kumar, R. W. Martin, M. Nouf-Allehiani, E. Pascal, L. Spasevski, D. Thomson, S. Vespucci, P. J. Parbrook, M. D. Smith, J. Enslin, F. Mehnke, M. Kneissl, C. Kuhn, T. Wernicke, S. Hagedorn, A. Knauer, V. Kueller, S. Walde, M. Weyers, P.-M. Coulon, P. A. Shields, Y. Zhang, L. Jiu, Y. Gong, R. M. Smith, T. Wang and A. Winkelmann|Show fewer author(s)

In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imagi

Photonics Research
Oct. 30, 2019, Vol. 7 Issue 11 11000B73 (2019)
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