High Power Laser and Particle Beams, Volume. 37, Issue 5, 054002(2025)
Total ionizing dose effect on gate drivers fabricated by BCD technology
Figures & Tables(11)
Fig. 2. Variation of output voltage of unhardened devices with irradiation dose
Fig. 3. Variation of output voltage of hardened devices with irradiation dose
Fig. 4. Variation of output current of unhardened devices with irradiation dose
Fig. 5. Variation of output current of hardened devices with irradiation dose
Fig. 6. Variation of output resistance of unhardened devices with irradiation dose
Fig. 7. Variation of output resistance of hardened devices with irradiation dose
Fig. 9. Simulation curve of output voltage varying with input voltage in the circuit
Fig. 10. Simulation curves of output voltage variation with threshold voltage shift in MOSFETs within the Schmitt trigger inverter
Fig. 11. Simulation curves of output voltage variation with threshold voltage drift of the terminal transistors
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Shiping Xu, Jiangwei Cui, Qiwen Zheng, Gang Liu, Kangwei Xing, Xiaolong Li, Weilei Shi, Xin Wang, Yudong Li, Qi Guo. Total ionizing dose effect on gate drivers fabricated by BCD technology[J]. High Power Laser and Particle Beams, 2025, 37(5): 054002
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Received: Jul. 18, 2024
Accepted: Jan. 15, 2025
Published Online: May. 22, 2025
The Author Email: Jiangwei Cui (cuijw@ms.xjb.ac.cn)
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