[1] Zhang Wei, Chen Shuguang. A novel gate driver IC based on BCD technology[J]. Transactions of Beijing Institute of Technology, 31, 1080-1084(2011).

[2] [2] Wu Qiongle. Design of a highvoltage gate driver circuit based on BCD process[D]. Chengdu: University of Electronic Science Technology of China, 2012

[3] Zhou Xin, Chen Langtao, Qiao Ming. The development of radiation-hardened high voltage integrated circuits[J]. Microelectronics & Computer, 39, 1-16(2022).

[4] Sun Weifeng, Zhang Bo, Xiao Sheng’an. Development and trend of power semiconductor devices and power integrated technology[J]. Scientia Sinica (Informationis), 42, 1616-1630(2012).

[5] [5] Zhang Zhengyuan, Feng Zhicheng, Li Xiaogang, et al. A research f BCD compatible technology[C]Proceedings of 2008 9th International Conference on SolidState IntegratedCircuit Technology. Beijing, 2008: 192194.

[6] [6] Ma Xiaobo, Thant Z T, Jiang Huihua, et al. Integration of splitgate flash memy in 130 nm BCD technology f automotive applications[C]Proceedings of 2019 Electron Devices Technology Manufacturing Conference (EDTM). 2019: 318320.

[7] [7] Antonov A A, Karpovich M S, Vasilyev V Y. Dual 4a highspeed lowside gate driver IC f GaN Si MOSFETs IGBTs[C]Proceedings of 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices Materials (EDM). 2022: 378382.

[8] Cao Jianwen, Zhou Zekun, Shi Yue et al. An integrated gate driver based on SiC MOSFETs adaptive multi-level control technique[J]. IEEE Transactions on Circuits and Systems I: Regular Papers, 70, 1805-1816(2023).

[9] [9] Park I Y, Choi Y K, Ko K Y, et al. BCD (BipolarCMOSDMOS) technology trends f power management IC[C]Proceedings of the 8th International Conference on Power Electronics ECCE Asia. 2011: 318325.

[10] [10] Ling Rongxun. Research implementation of key technologies f radiationhard power integrated circuits[D]. Chengdu: University of Electronic Science Technology of China, 2020

[11] [11] Zhou Xiao, Luo Ping, He Linyan, et al. A radiationhard waffle layout f BCD power MOSFET[C]Proceedings of 2017 IEEE 12th International Conference on ASIC (ASICON). 2017: 773775.

[12] [12] Zhao Shuanglong. Application of BCD process in power management IC design[D]. Hangzhou: Zhejiang University, 2006

[13] Wang Peng, Xu Qing, Hang Li. A design of radiation hardening high-voltage MOSFET driver[J]. Journal of Terahertz Science and Electronic Information Technology, 14, 972-976(2016).

[14] [14] Feng Yaong. The design of a radiationhardened gate drive circuit[D]. Chengdu: University of Electronic Science Technology of China, 2019

[15] [15] Guan Xiaoming. Design of radiationhard highvoltage gate driver circuit[D]. Chengdu: University of Electronic Science Technology of China, 2020

[16] [16] Lai Rongxing, Fang Jian, Guan Xiaoming, et al. A radiationhard gate driver circuit f high voltage application[C]Proceedings of 2020 32nd International Symposium on Power Semiconduct Devices ICs (ISPSD). 2020: 262265.

[17] Lei Xin, Gao Xingguo, Deng Jun et al. A 15-V tolerant and radiation-hardened MOSFET driver with positive and negative references[J]. IEEE Transactions on Aerospace and Electronic Systems, 59, 851-857(2023).

[18] Lu Yu, Cai Xiaowu, Dang Jianying et al. A novel radiation-hardened level shifter with dV/dt noise immunity for 600-V HVIC[J]. IEEE Transactions on Nuclear Science, 71, 2086-2093(2024).

[19] Schwank J R, Shaneyfelt M R, Fleetwood D M et al. Radiation effects in MOS oxides[J]. IEEE Transactions on Nuclear Science, 55, 1833-1853(2008).