The BCD technology integrates Bipolar, Complementary Metal Oxide Semiconductor (CMOS), and Double Diffused MOSFET (DMOS) within a single chip, widely utilized in electronic components and system production. Gate drivers fabricated by BCD technology can reduce transmission delays, lower power consumption, and enhance drive capabilities. However, the radiation effects in space environments may lead to performance degradation and potentially jeopardize the safety of spacecraft. This paper focuses on gate drivers based on BCD technology, employing an enclosed layout structure for total ionizing dose (TID) radiation hardening. Through TID irradiation tests, the electrical parameter variations between hardened and unhardened devices are compared. Results indicate that TID radiation causes degradation in the output voltage and current characteristics of the device, manifesting as a decrease in switching voltage and an increase in output current, while having a negligible impact on the output resistance. Comparing test outcomes from both types of drivers, it is evident that the ring-gate hardening method effectively mitigates edge leakage induced by TID radiation to a certain extent. Nevertheless, functional failure occurs in the devices at 500 krad(Si).