Journal of Infrared and Millimeter Waves, Volume. 40, Issue 2, 156(2021)
Effect of thermal annealing on the interface changes of multi-layer HgCdTe P-on-N materials grown by MBE
Figures & Tables(9)
Fig. 2. Schematic diagram of thermal annealing under Hg pressure Note: A is HgCdTe sample, B is annealing source (Hg) , C is Quartz tube
Fig. 3. The changes of Cd composition under different thermal annealing conditions (a) sample A, (b) sample B
Fig. 4. The changes of Cd composition of CdTe/HgCdTe interface under different thermal annealing conditions (a) Sample A, (b) Sample B
Fig. 5. The changes of Cd composition of heterojunction interface under different thermal annealing conditions (a) sample A, (b) sample B
Fig. 6. The changes of As doping of heterojunction interface under different thermal annealing conditions (a) sample A, (b) sample B
Fig. 7. The changes of In doping under different thermal annealing conditions (a) sample A, (b) sample B
Fig. 8. The changes of band energy of HgCdTe P-on-N structure under different thermal annealing conditions (a) sample A, (b) sample B
Fig. 9. The changes of light current of HgCdTe P-on-N structure under different thermal annealing conditions (a) sample A, (b) sample B
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Chuan SHEN, Lu CHEN, Shun-Dong BU, Yang-Rong LIU, Li HE. Effect of thermal annealing on the interface changes of multi-layer HgCdTe P-on-N materials grown by MBE[J]. Journal of Infrared and Millimeter Waves, 2021, 40(2): 156
Paper Information
Category: Research Articles
Received: May. 11, 2020
Accepted: --
Published Online: Aug. 31, 2021
The Author Email: Chuan SHEN (shenchuan@mail.sitp.ac.cn)
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