Effect of thermal annealing on the interface changes of multi-layer HgCdTe P-on-N materials grown by MBE

Chuan SHEN; Lu CHEN; Shun-Dong BU; Yang-Rong LIU; Li HE

doi:10.11972/j.issn.1001-9014.2021.02.003

Journal of Infrared and Millimeter Waves, Volume. 40, Issue 2, 156(2021)

Effect of thermal annealing on the interface changes of multi-layer HgCdTe P-on-N materials grown by MBE

Chuan SHEN^*, Lu CHEN, Shun-Dong BU, Yang-Rong LIU, and Li HE

Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

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References(10)

[1] Rogalski A. Recent progress in infrared detector technologies[J]. Infrared Physics & Technology, 54, 136-154(2011).

[2] Qiu W, Hu W. Laser beam induced current microscopy and photocurrent mapping for junction characterization of infrared photodetectors[J]. Science China-Physics Mechanics & Astronomy, 58, 1-13(2015).

[3] Hu W, Li Q, Chen X et al. "Recent progress on advanced infrared photodetectors,". Acta Phys. Sin., 12(2019).

[4] Chandra D, Weirauch D F, Schaake H F et al. Growth of very low arsenic-doped HgCdTe[J]. Journal of electronic materials, 34, 963-967(2005).

[5] QIN Gang, LI Dong-Sheng. The As-doping technique of HgCdTe thin film by MBE[J]. Infrared Technology, 37, 858-863(2015).

[6] Arias J, Zandian M, Pasko J G et al. Molecular-beam epitaxy growth and in situ arsenic doping of p-on-n HgCdTe heterojunctions[J]. Journal of applied physics, 69, 2143-2148(1991).

[7] Zandian M, Chen A C, Edwall D D et al. p-type arsenic doping of HgCdTe by molecular beam epitaxy[J]. Applied Physics Letters, 71, 2815-2817(1997).

[8] Sivananthan S, Wijewarnasuriya P S, Aqariden F et al. Mode of arsenic incorporation in HgCdTe grown by MBE[J]. Journal of Electronic Materials, 26, 621-624(1997).

[9] Liang J, Hu W, Ye Z et al. Improved performance of HgCdTe infrared detector focal plane arrays by modulating light field based on photonic crystal structure[J]. Journal of Applied Physics, 115, 184504(2014).

[10] Gopal V, Qiu W, Hu W. Modelling of illuminated current-voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors[J]. Journal of Applied Physics, 116, 184503(2014).

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Chuan SHEN, Lu CHEN, Shun-Dong BU, Yang-Rong LIU, Li HE. Effect of thermal annealing on the interface changes of multi-layer HgCdTe P-on-N materials grown by MBE[J]. Journal of Infrared and Millimeter Waves, 2021, 40(2): 156

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Paper Information

Category: Research Articles

Received: May. 11, 2020

Accepted: --

Published Online: Aug. 31, 2021

The Author Email: Chuan SHEN (shenchuan@mail.sitp.ac.cn)

DOI:10.11972/j.issn.1001-9014.2021.02.003

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology