Journal of Infrared and Millimeter Waves, Volume. 40, Issue 2, 156(2021)

Effect of thermal annealing on the interface changes of multi-layer HgCdTe P-on-N materials grown by MBE

Chuan SHEN*, Lu CHEN, Shun-Dong BU, Yang-Rong LIU, and Li HE
Author Affiliations
  • Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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    The interface changes of multi-layer HgCdTe P-on-N epitaxial materials grown by molecular beam epitaxy (MBE) before and after high temperature thermal annealing were studied. It is found that high temperature thermal annealing causes the change of the interface layer of HgCdTe P-on-N structure and destroys the original designed structure. This change can be controlled to some extent by thermal annealing conditions. At the same time, the structural changes of P-on-N before and after thermal annealing are simulated numerically, and the effects of different changes on the energy band and light current are studied.

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    Chuan SHEN, Lu CHEN, Shun-Dong BU, Yang-Rong LIU, Li HE. Effect of thermal annealing on the interface changes of multi-layer HgCdTe P-on-N materials grown by MBE[J]. Journal of Infrared and Millimeter Waves, 2021, 40(2): 156

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    Paper Information

    Category: Research Articles

    Received: May. 11, 2020

    Accepted: --

    Published Online: Aug. 31, 2021

    The Author Email: Chuan SHEN (shenchuan@mail.sitp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2021.02.003

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