InGaAs/InAlAs InP-based HEMT with the current cutoff frequency of 441 GHz

Fig. 5. (a) The measured and modeled H₂₁, MAG/MSG and U gains versus frequency for the L_g = 54.4 nm InGaAs/InAlAs HEMT at V_GS = -0.35 V and V_DS = 0.7 V, and (b) small-signal equivalent circuit model used in pervious work^[16]

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Fig. 6. Measured f_T against I_DS of the L_g = 54.4 nm InGaAs/InAlAs HEMT with V_DS = 0.7 V

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Table 1. Small-signal model parameters of the Lg = 54.4 nm InGaAs/InAlAs HEMTs at V_DS_{= 0.7 V, with different structures}

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Table 1. Small-signal model parameters of the Lg = 54.4 nm InGaAs/InAlAs HEMTs at V_DS_{= 0.7 V, with different structures}

C_gs［fF/mm］	C_gd ［fF/mm］	C_ds ［fF/mm］	g_mi ［mS/mm］	g_ds ［mS/mm］	R_i ［Ω•mm］	R_g ［Ω•mm］
322.1	134.1	1 124	2 431	597.7	0.01	0.346 6
R_D ［Ω•mm］	R_S ［Ω•mm］	R_gs ［Ω•mm］	R_gd ［Ω•mm］	f_{T_measure}［GHz］	f_{T_model}［GHz］	f_{max_model}［GHz］
0.538 3	0.159 9	375.9	3 617	441	443	299

Table 2. Comparison with published InGaAs(InAs)/InAlAs HEMTs with L_g from 50 nm to 75 nm

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Table 2. Comparison with published InGaAs(InAs)/InAlAs HEMTs with L_g from 50 nm to 75 nm

Ref.	L_g/nm	Gate metal	Channel	g_m/（mS/mm）	f_T/GHz （V_DS/V）	f_max/GHz （V_DS/V）
17	50	Pt/Ti/Pt/Au	InAs	2 000	496 （0.6）	400 （0.6）
18	50	Pt/Ti/Pt/Au	In_0.7Ga_0.3As	1 750	465 （0.75）	1 060 （0.75）
19	60	Pt/Ti/Pt/Au	InAs	2 100	580 （0.6）	675 （0.6）
20	60	Pt/Ti/Pt/Au	InAs	2 114	710 （0.5）	478 （0.5）
21	70	Ti/Pt/Au	In_0.7Ga_0.3As	1 600	310 （1.2）	540 （1.2）
22	75	Ti/Pt/Au	InAs	1 331	260 （1.0）	800 （1.0）
This work	54.4	Ti/Pt/Au	In_0.53Ga_0.47As	1 265	441 （0.7）	299 （0.7）

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Rui-Ze FENG, Shu-Rui CAO, Zhi-Yu FENG, Fu-Gui ZHOU, Tong LIU, Yong-Bo SU, Zhi JIN. InGaAs/InAlAs InP-based HEMT with the current cutoff frequency of 441 GHz[J]. Journal of Infrared and Millimeter Waves, 2024, 43(3): 329

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Paper Information

Category: Research Articles

Received: Apr. 13, 2023

Accepted: --

Published Online: Apr. 29, 2024

The Author Email: Zhi JIN (jinzhi@ime.ac.cn)

DOI:10.11972/j.issn.1001-9014.2024.03.006

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Small-signal model parameters of the Lg = 54.4 nm InGaAs/InAlAs HEMTs at VDS= 0.7 V, with different structures

Table 1. Small-signal model parameters of the Lg = 54.4 nm InGaAs/InAlAs HEMTs at VDS= 0.7 V, with different structures

Table 2. Comparison with published InGaAs(InAs)/InAlAs HEMTs with Lg from 50 nm to 75 nm

Table 2. Comparison with published InGaAs(InAs)/InAlAs HEMTs with Lg from 50 nm to 75 nm

Table 1. Small-signal model parameters of the Lg = 54.4 nm InGaAs/InAlAs HEMTs at V_DS_{= 0.7 V, with different structures}

Table 1. Small-signal model parameters of the Lg = 54.4 nm InGaAs/InAlAs HEMTs at V_DS_{= 0.7 V, with different structures}

Table 2. Comparison with published InGaAs(InAs)/InAlAs HEMTs with L_g from 50 nm to 75 nm

Table 2. Comparison with published InGaAs(InAs)/InAlAs HEMTs with L_g from 50 nm to 75 nm