Researching | InGaAs/InAlAs InP-based HEMT with the current cutoff frequency of 441 GHz

Journal of Infrared and Millimeter Waves, Volume. 43, Issue 3, 329(2024)

InGaAs/InAlAs InP-based HEMT with the current cutoff frequency of 441 GHz

Rui-Ze FENG^1,2, Shu-Rui CAO^1,2, Zhi-Yu FENG^1,2, Fu-Gui ZHOU^1,2, Tong LIU¹, Yong-Bo SU^1,2, and Zhi JIN^1,2、*

Author Affiliations

¹High-Frequency High-Voltage Device and Integrated Circuits Center，Institute of Microelectronics，Chinese Academy of Sciences，Beijing 100029，China

²School of Integrated Circuits，University of Chinese Academy of Sciences，Beijing 100049，China

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References(22)

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[4] Zhong Y H, Yang B, Chang MM et al. Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane[J]. Chinese Physics B, 29, 532-536(2020).

[5] Mei X, Yoshida W, Lange M et al. First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process[J]. IEEE Electron Device Letters, 36, 327-329(2015).

[6] Jo Hyeon-Bhin, Yun Seung-Won, Kim Jun-Gyu et al. Lg = 19 nm In0.8Ga0.2As composite-channel HEMTs with fT = 738 GHz and fmax = 492 GHz[C], 8.4.1-8.4.4(2020).

[7] Kim D. -H., Brar B., del Alamo J. A.. fT = 688 GHz and fmax = 800 GHz in Lg = 40 nm In0.7Ga0.3As MHEMTs with gm_max > 2.7 mS/µm[C], 13.6.1-13.6.4(2011).

[8] Yun D Y, Jo H B, Son S W et al. Impact of the Source-to-Drain Spacing on the DC and RF Characteristics of InGaAs/InAlAs High-Electron Mobility Transistors[J]. IEEE Electron Device Letters, 39, 1844-1847(2018).

[9] Jo H B, Baek J M, Yun D Y et al. Lg = 87 nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and fT of 559 GHz[J]. IEEE Electron Device Letters, 39, 1640-1643(2018).

[10] Barsky M., Biedenbender M., Mei X. et al. Advanced InP and GaAs HEMT MMIC technologies for MMW commercial products[C], 147-148(2007).

[11] Barsky M., Biedenbender M., Mei X. et al. Advanced InP and GaAs HEMT MMIC technologies for MMW commercial products[C], 147-148(2007).

[12] Kim Dae-Hyun, del Alamo J. A., Lee Jae-Hak et al. The Impact of Side-Recess Spacing on the Logic Performance of 50 nm InGaAs HEMTs[C], 177-180(2006).

[13] Tong Zhihang, Ding Peng, Su Yongbo et al. Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH[J]. IEEE Journal of the Electron Devices Society, 8, 600-607(2020).

[14] Tong Zhihang, Ding Peng, Su Yongbo et al. Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs[J]. Chinese Physics B, 30, 018501(2021).

[15] Feng Ruize, Wang Bo, Cao Shurui et al. Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs[J]. Chinese Physics B, 31, 788-792(2022).

[16] Wang Yanfu, Wang Bo, Feng Ruize et al. Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology[J]. Chinese Physics B, 31, 018502(2022).

[17] Matsuzaki Hideaki, Maruyama Takashi, Koasugi Toshihiko et al. Lateral scale down of InGaAs/InAs composite-channel HEMTs with tungsten-based tiered ohmic structure for 2-S/mm gm and 500-GHz fT[J]. IEEE Transactions on electron devices, 54, 378-384(2007).

[18] Kim D H, Alamo J a D, Chen P et al. 50-nm E-mode In07Ga0.3As PHEMTs on 100-mm InP substrate with fmax> 1 THz[C], 30.6. 1-30.6. 4(2010).

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[22] Samnouni M., Wichmann N., Wallart X. et al. 75 nm Gate Length PHEMT With fmax = 800 GHz Using Asymmetric Gate Recess: RF and Noise Investigation[J]. IEEE Transactions on Electron Devices, 68, 4289-4295(2021).

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Rui-Ze FENG, Shu-Rui CAO, Zhi-Yu FENG, Fu-Gui ZHOU, Tong LIU, Yong-Bo SU, Zhi JIN. InGaAs/InAlAs InP-based HEMT with the current cutoff frequency of 441 GHz[J]. Journal of Infrared and Millimeter Waves, 2024, 43(3): 329

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Paper Information

Category: Research Articles

Received: Apr. 13, 2023

Accepted: --

Published Online: Apr. 29, 2024

The Author Email: Zhi JIN (jinzhi@ime.ac.cn)

DOI:10.11972/j.issn.1001-9014.2024.03.006

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology