Fig. 1. Light field distribution of ridge structure

Fig. 2. SEM image of AlGaInAs/InP semiconductor laser die structure

Fig. 3. P-I-V curves of device at room temperature

Fig. 4. Far-field beam spot and divergence angle of the device at the highest power output

Fig. 5. Curve of external differential quantum efficiency 1/η_d versus cavity length L

Fig. 6. Power versus current curves of devices at different temperatures

Fig. 7. Curve of threshold current versus temperature

Fig. 8. Curves of residual thickness of cladding versus ridge width at different temperatures when the first-order mode is cut off

Fig. 9. P-I curve at 60 ℃, the inset shows the variation of horizontal far-field divergence angle with current

Fig. 10. Current at which the kink effect occurs in devices with different cavity lengths