1550 nm High-Power Fundamental Transverse Mode Semiconductor Laser and Its Temperature Characteristics

Jinyuan Chang; Cong Xiong; Qiong Qi; Cuiluan Wang; Lingni Zhu; Zhipeng Pan; Zhennuo Wang; Suping Liu; Xiaoyu Ma

doi:10.3788/AOS221772

Acta Optica Sinica, Volume. 43, Issue 7, 0714003(2023)

1550 nm High-Power Fundamental Transverse Mode Semiconductor Laser and Its Temperature Characteristics

Jinyuan Chang^1,2, Cong Xiong^1、*, Qiong Qi¹, Cuiluan Wang¹, Lingni Zhu¹, Zhipeng Pan^1,2, Zhennuo Wang^1,2, Suping Liu¹, and Xiaoyu Ma¹

Author Affiliations

¹National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

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Jinyuan Chang, Cong Xiong, Qiong Qi, Cuiluan Wang, Lingni Zhu, Zhipeng Pan, Zhennuo Wang, Suping Liu, Xiaoyu Ma. 1550 nm High-Power Fundamental Transverse Mode Semiconductor Laser and Its Temperature Characteristics[J]. Acta Optica Sinica, 2023, 43(7): 0714003

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Paper Information

Category: Lasers and Laser Optics

Received: Sep. 30, 2022

Accepted: Oct. 31, 2022

Published Online: Apr. 6, 2023

The Author Email: Xiong Cong (xiongcong@semi.ac.cn)

DOI:10.3788/AOS221772

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology