Chinese Journal of Lasers, Volume. 45, Issue 11, 1100001(2018)

13.5 nm Extreme Ultraviolet Light Source Based on Discharge Produced Xe Plasma

Yongpeng Zhao1、*, Qiang Xu1,2, Qi Li1, and Qi Wang1
Author Affiliations
  • 1 National Key Laboratory of Science and Technology on Tunable Laser, Harbin Institute of Technology, Harbin, Heilongjiang 150080, China
  • 2 College of Science, Northeast Forestry University, Harbin, Heilongjiang 150040, China
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    The experimental setup of an extreme ultraviolet (EUV) light source is built. The EUV radiation spectrum with a central wavelength of 13.5 nm from the Xe plasma is obtained and the temporal characteristics are characterized. The multi-peak structure of a light pulse is clarified by the multiple pinch theory. The influence laws of the experimental parameters such as the current amplitude of main pulse, Xe flow rate, inner diameter of ceramic tube, plasma length, and auxiliary gas on EUV radiation intensity are obtained. In addition, a prototype of 13.5 nm EUV light source with a repetition rate of 1 kHz is built and its power supply system, discharge system, debris mitigation tool and collector system are described. The test results about the prototype are also given.

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    Yongpeng Zhao, Qiang Xu, Qi Li, Qi Wang. 13.5 nm Extreme Ultraviolet Light Source Based on Discharge Produced Xe Plasma[J]. Chinese Journal of Lasers, 2018, 45(11): 1100001

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    Paper Information

    Category: reviews

    Received: May. 28, 2018

    Accepted: Jul. 5, 2018

    Published Online: May. 9, 2019

    The Author Email:

    DOI:10.3788/CJL201845.1100001

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