Researching | Influence of Wet Etching Passivation on Surface Properties of Gallium Arsenide

Chinese Journal of Lasers, Volume. 51, Issue 16, 1602208(2024)

Influence of Wet Etching Passivation on Surface Properties of Gallium Arsenide

Yalei Zhang, Yunping Lan^*, Jiayuan Han, Hongrong Zhang, and Yonggang Zou

Author Affiliations

State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130013, Jilin , China

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References(35)

[1] Afonenko A, Ushakov D, Alymov G et al. Feasibility of lasing in the GaAs reststrahlen band with HgTe multiple quantum well laser diodes[J]. Journal of Physics D Applied Physics, 54, 175108(2021).

[2] Michaud J, Béchou L, Veyrié D et al. Thermal behavior of high power GaAs-based laser diodes in vacuum environment[J]. IEEE Photonics Technology Letters, 28, 665-668(2016).

[3] Rashidi M, Haggren T, Su Z C et al. Managing resonant and nonresonant lasing modes in GaAs nanowire random lasers[J]. Nano Letters, 21, 3901-3907(2021).

[4] Slivken S, Razeghi M. High power mid-infrared quantum cascade lasers grown on GaAs[J]. Photonics, 9, 231(2022).

[5] Buencuerpo J, Llorens J M, Ripalda J M et al. Engineering the reciprocal space for ultrathin GaAs solar cells[J]. Optics & Laser Technology, 142, 107224(2021).

[6] Ouyang H C, Shang L, Xu C M et al. Conversion characteristics and damage of GaAs solar cells irradiated by 532 nm continuous laser[J]. Laser & Optoelectronics Progress, 59, 1716004(2022).

[7] Zhang Y, Long J H, Sun Q J et al. Analysis of inverted GaInP/GaAs/InGaAs triple-junction solar cell failure[J]. Acta Optica Sinica, 42, 2016001(2022).

[8] Liu Y, Zhang B, Feng Y N et al. Development of 340-GHz transceiver front end based on GaAs monolithic integration technology for THz active imaging array[J]. Applied Sciences, 10, 7924(2020).

[9] Choi H. Pre-matching circuit for high-frequency ultrasound transducers[J]. Sensors, 22, 8861(2022).

[10] Li X, Yu X Z, Zeng H T et al. Optimizing GaAs nanowire-based visible-light photodetectors[J]. Applied Physics Letters, 119, 053105(2021).

[11] Ma Z Z, Tang P, Xue J C et al. Enhancing photoresponse of GaAs-based photodetector by plasmon grating structures[J]. Plasmonics, 18, 1571-1579(2023).

[12] Li J C, Wang J, Xiao C Y et al. Investigation of surface improvement of GaAs/Si(001) with strain balanced superlattice[J]. Chinese Journal of Lasers, 50, 0603002(2023).

[13] Adlkofer K, Tanaka M, Hillebrandt H et al. Electrochemical passivation of gallium arsenide surface with organic self-assembled monolayers in aqueous electrolytes[J]. Applied Physics Letters, 76, 3313-3315(2000).

[14] Park J, Cho E, Park K et al. Electrochemical control of surface passivation and deformation in InP nanotetrapods[J]. Applied Surface Science, 641, 158524(2023).

[15] Lebedev M V, Lvova T V, Smirnov A N et al. Abnormal electronic structure of chemically modified n-InP(100) surfaces[J]. Journal of Materials Chemistry C, 10, 2163-2172(2022).

[16] Arudra P, Marshall G M, Liu N et al. Enhanced photonic stability of GaAs in aqueous electrolyte using alkanethiol self-assembled monolayers and postprocessing with ammonium sulfide[J]. The Journal of Physical Chemistry C, 116, 2891-2895(2012).

[17] Ghods A, Saravade V G, Zhou C L et al. Field-effect passivation of metal/n-GaAs Schottky junction solar cells using atomic layer deposited Al2O3/ZnO ultrathin films[J]. Journal of Vacuum Science Technology A: Vacuum Surfaces and Films, 38, 012406(2020).

[18] Mattila P, Bosund M, Jussila H et al. Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces[J]. Applied Surface Science, 314, 570-574(2014).

[19] Song Y Y, Song D, Li Y et al. Influence of passivation layer and P-type base structure optimization on charge collection efficiency of electron bombardment active pixel sensor[J]. Chinese Journal of Lasers, 50, 1803001(2023).

[20] Jacob B, Camarneiro F, Borme J et al. Surface passivation of III-V GaAs nanopillars by low-frequency plasma deposition of silicon nitride for active nanophotonic devices[J]. ACS Applied Electronic Materials, 4, 3399-3410(2022).

[21] McGuiness C L, Diehl G A, Blasini D et al. Molecular self-assembly at bare semiconductor surfaces: cooperative substrate-molecule effects in octadecanethiolate monolayer assemblies on GaAs(111), (110), and (100)[J]. ACS Nano, 4, 3447-3465(2010).

[22] Huang X H, Dubowski J J. Solvent-mediated self-assembly of hexadecanethiol on GaAs (001)[J]. Applied Surface Science, 299, 66-72(2014).

[23] Xia N, Fang X, Rong T Y et al. Effect of surface sulfur passivation on photoresponse characteristics of GaAs materials[J]. Chinese Journal of Lasers, 45, 0603002(2018).

[24] van Dorp D H, Arnauts S, Cuypers D et al. Nanoscale etching of In0.53Ga0.47As in H2O2/HCl solutions for advanced CMOS processing[J]. ECS Journal of Solid State Science and Technology, 3, P179-P184(2014).

[25] Abrenica G H A, Fingerle M, Lebedev M V et al. Wet chemical processing of Ge in acidic H2O2 solution: nanoscale etching and surface chemistry[J]. ECS Journal of Solid State Science and Technology, 9, 084002(2020).

[26] van Dorp D H, Vanheusden G, Paulussen K et al. Photoanodic oxidation of InP in acid solution and its surface chemistry: on the interplay of photons, protons and hydrodynamics[J]. Electrochimica Acta, 360, 136872(2020).

[27] Abrenica G H A, Lebedev M V, Fingerle M et al. A synchrotron radiation photoelectron spectroscopy study on atomic-scale wet etching of InAs (111)-A and (111)-B in acidic peroxide solutions: surface chemistry versus kinetics[J]. Materials Today Chemistry, 23, 100728(2022).

[28] Mahmoodnia H, Salehi A, Mastelaro V R. GaAs semiconductor passivated by (NH4)2Sx: analysis of different passivation methods using electrical characteristics and XPS measurements[J]. Semiconductors, 54, 817-826(2020).

[29] Cuypers D, Fleischmann C, van Dorp D H et al. Sacrificial self-assembled monolayers for the passivation of GaAs (100) surfaces and interfaces[J]. Chemistry of Materials, 28, 5689-5701(2016).

[30] van Dorp D H, Arnauts S, Laitinen M et al. Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry[J]. Applied Surface Science, 465, 596-606(2019).

[31] Huang Y, Luo J L, Ivey D G. Comparative study of GaAs corrosion in H2SO4 and NH3·H2O solutions by electrochemical methods and surface analysis[J]. Materials Chemistry and Physics, 93, 429-442(2005).

[32] Ding X M, Moumanis K, Dubowski J J et al. Fourier-transform infrared and photoluminescence spectroscopies of self-assembled monolayers of long-chain thiols on (001) GaAs[J]. Journal of Applied Physics, 99, 054701(2006).

[33] Tsang W T, Wang S. Profile and groove-depth control in GaAs diffraction gratings fabricated by preferential chemical etching in H2SO4-H2O2-H2O system[J]. Applied Physics Letters, 28, 44-46(1976).

[34] Espinosa-Vega L I, Eugenio-Lopez E, Gutierrez-Hernandez J M et al. Strain and anisotropy effects studied in InAs/GaAs(221) quantum dashes by Raman spectroscopy[J]. Journal of Crystal Growth, 477, 212-216(2017).

[35] Zhou L, Chu X F, Chi Y D et al. Property improvement of GaAs surface by 1-octadecanethiol passivation[J]. Crystals, 9, 130(2019).

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Yalei Zhang, Yunping Lan, Jiayuan Han, Hongrong Zhang, Yonggang Zou. Influence of Wet Etching Passivation on Surface Properties of Gallium Arsenide[J]. Chinese Journal of Lasers, 2024, 51(16): 1602208

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Paper Information

Category: Laser Surface Machining

Received: Oct. 11, 2023

Accepted: Nov. 27, 2023

Published Online: Jul. 24, 2024

The Author Email: Lan Yunping (lanyp@cust.edu.cn)

DOI:10.3788/CJL231276

CSTR:32183.14.CJL231276

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology