Influence of Wet Etching Passivation on Surface Properties of Gallium Arsenide

Fig. 4. Effects of acid concentration in H₂SO₄ solution and H₂O₂-free solution on passivation. (a) PL spectra; (b) test maps by fast fluorescence spectrometer

Download full size

Fig. 5. Analysis results by Raman system. (a) GaAs substrate; (b) C2

Download full size

Fig. 6. Test results by EDS. (a) GaAs substrate; (b) C2

Download full size

Fig. 7. SEM and AFM morphologies. (a) C2, SEM; (b) C3, SEM; (c) GaAs substrate, AFM; (d) C2, AFM; (e) C3, AFM

Download full size

Fig. 8. Test results for stability of passivation layer. (a) PL spectra; (b) test maps by fast fluorescence spectrometer

Download full size

Table 1. Experimental scheme for acid etching

View table

Table 1. Experimental scheme for acid etching

Sample No.	Acidic solution	Time	Passivation condition
A1	V（H₂SO₄）∶V（H₂O₂）=1∶4	90 s	In ODT solution for 1 h
A2	V（HCl）∶V（H₂O₂）∶V（H₂O）=1∶1∶6	90 s	In ODT solution for 1 h
A3	V（H₂SO₄）∶V（H₂O₂）=1∶4， V（HCl）∶V（H₂O₂）∶V（H₂O）=1∶1∶6	90 s	In ODT solution for 1 h
A4	V（HCl）∶V（H₂O₂）∶V（H₂O）=1∶1∶6， V（H₂SO₄）∶V（H₂O₂）=1∶4	90 s	In ODT solution for 1 h

Table 2. Experimental scheme for effects of acid etching time and ODT-free solution on passivation

View table

Table 2. Experimental scheme for effects of acid etching time and ODT-free solution on passivation

Sample No.	Acidic solution parameter	Time	Passivation condition
B1	V（H₂SO₄）∶V（H₂O₂）=1∶4 and V（HCl）∶V（H₂O₂）∶V（H₂O）=1∶1∶6	60 s	In ODT solution for 1 h
A3		90 s	In ODT solution for 1 h
B2		120 s	In ODT solution for 1 h
B3		180 s	In ODT solution for 1 h
B4		90 s	ODT-free solution

Table 3. Experimental scheme for effects of acid concentration in H₂SO₄ solution and H₂O₂-free solution on passivation

View table

Table 3. Experimental scheme for effects of acid concentration in H₂SO₄ solution and H₂O₂-free solution on passivation

Sample No.	Acidic solution parameter	Time	Passivation condition
A3	V（H₂SO₄）∶V（H₂O₂）=1∶4 and V（HCl）∶V（H₂O₂）∶V（H₂O）=1∶1∶6	90 s	In ODT solution for 1 h
C1	V（H₂SO₄）∶V（H₂O₂）∶V（H₂O）=1∶4∶5 and V（HCl）∶V（H₂O₂）∶V（H₂O）=1∶1∶6	90 s	In ODT solution for 1 h
C2	V（H₂SO₄）∶V（H₂O₂）∶V（H₂O）=1∶4∶15 and V（HCl）∶V（H₂O₂）∶V（H₂O）=1∶1∶6	90 s	In ODT solution for 1 h
C3	V（H₂SO₄）∶V（H₂O）=1∶19 and V（HCl）∶V（H₂O）=1∶7	90 s	In ODT solution for 1 h

Tools

Get Citation

Copy Citation Text

Yalei Zhang, Yunping Lan, Jiayuan Han, Hongrong Zhang, Yonggang Zou. Influence of Wet Etching Passivation on Surface Properties of Gallium Arsenide[J]. Chinese Journal of Lasers, 2024, 51(16): 1602208

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Laser Surface Machining

Received: Oct. 11, 2023

Accepted: Nov. 27, 2023

Published Online: Jul. 24, 2024

The Author Email: Lan Yunping (lanyp@cust.edu.cn)

DOI:10.3788/CJL231276

CSTR:32183.14.CJL231276

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Experimental scheme for acid etching

Table 1. Experimental scheme for acid etching

Table 2. Experimental scheme for effects of acid etching time and ODT-free solution on passivation

Table 2. Experimental scheme for effects of acid etching time and ODT-free solution on passivation

Table 3. Experimental scheme for effects of acid concentration in H2SO4 solution and H2O2-free solution on passivation

Table 3. Experimental scheme for effects of acid concentration in H2SO4 solution and H2O2-free solution on passivation

Table 3. Experimental scheme for effects of acid concentration in H₂SO₄ solution and H₂O₂-free solution on passivation

Table 3. Experimental scheme for effects of acid concentration in H₂SO₄ solution and H₂O₂-free solution on passivation