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Chinese Journal of Lasers, Volume. 50, Issue 24, 2402203(2023)

Study of Femtosecond Laser Ablation and Polishing Process on RB‑SiC Surface

Huan Chen1,2, Chaoyang Wei1,2、*, Zhen Cao1,2、**, Xiaocong Peng1,2, and Jianda Shao1,2
Author Affiliations
  • 1Precision Optical Manufacturing and Testing Center, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Material Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (11)
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    References (39)
    Cited By (6)
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    Figures & Tables(11)
    Test device and scanning path. (a) Schematic of femtosecond laser direct writing processing system; (b) scanning path

    Fig. 1. Test device and scanning path. (a) Schematic of femtosecond laser direct writing processing system; (b) scanning path

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    Temperature versus time for electrons and lattices of SiC and Si

    Fig. 2. Temperature versus time for electrons and lattices of SiC and Si

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    Temperatures of lattices of SiC and Si under different pulse energy values

    Fig. 3. Temperatures of lattices of SiC and Si under different pulse energy values

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    Femtosecond laser single pulse ablation results of RB-SiC under different pulse energy values. (a) Single pulse ablation morphologies; (b) relationship between ablation diameter and pulse energy

    Fig. 4. Femtosecond laser single pulse ablation results of RB-SiC under different pulse energy values. (a) Single pulse ablation morphologies; (b) relationship between ablation diameter and pulse energy

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    Regional ablation test results under different pulse energy values. (a) Surface roughness of ablation area; (b) ablative depth of ablative area

    Fig. 5. Regional ablation test results under different pulse energy values. (a) Surface roughness of ablation area; (b) ablative depth of ablative area

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    Effects of scanning speed and pulse frequency on ablation of RB-SiC surface area. (a) Surface roughness; (b) ablation depth

    Fig. 6. Effects of scanning speed and pulse frequency on ablation of RB-SiC surface area. (a) Surface roughness; (b) ablation depth

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    Surface roughness of ablation area at different scanning spacing

    Fig. 7. Surface roughness of ablation area at different scanning spacing

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    Surface roughness of RB-SiC before and after polishing under different scanning spacing

    Fig. 8. Surface roughness of RB-SiC before and after polishing under different scanning spacing

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    Surface morphologies of RB-SiC before and after polishing under different scanning spacing. (a) 0.0018 mm; (b) 0.0012 mm; (c) 0.0006 mm; (d) 0.0002 mm

    Fig. 9. Surface morphologies of RB-SiC before and after polishing under different scanning spacing. (a) 0.0018 mm; (b) 0.0012 mm; (c) 0.0006 mm; (d) 0.0002 mm

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    • Table 1. Physical parameters of SiC and Si used in model

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      Table 1. Physical parameters of SiC and Si used in model

      Physical parameterSymbolUnitValue
      SiC［36-37］Si［38-39］
      Electron-phonon coupling strengthgW /（m3·K）1.12×10172.07×1017
      Heat capacity of electronCeJ /（m3·K）78.3103.575
      Thermal conductivity of electronKeJ /（m·K·s）27.3158.3
      Heat capacity of latticeClJ /（m3·K）1.659×1052.08×105
      Thermal conductivity of latticeKlJ /（m·K·s）1.483.24
      ReflectanceR0.80.327
      Depth of ballistic transportationLpm1.37×10-99.8×10-6

    • Table 2. Parameter settings of pulse frequency and scanning speed

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      Table 2. Parameter settings of pulse frequency and scanning speed

      Pulse frequency /kHzScanning speed /（mm/s）
      1000.000.8，1.6，2.4，3.2，4.0，4.8，5.6，6.4，7.2，8.0
      500.000.8，1.6，2.4，3.2，4.0，4.8，5.6，6.4，7.2，8.0
      333.330.8，1.6，2.4，3.2，4.0，4.8，5.6，6.4，7.2，8.0
      250.000.8，1.6，2.4，3.2，4.0，4.8，5.6，6.4，7.2，8.0
      200.000.8，1.6，2.4，3.2，4.0，4.8，5.6，6.4，7.2，8.0
      166.670.8，1.6，2.4，3.2，4.0，4.8，5.6，6.4，7.2，8.0
      125.000.8，1.6，2.4，3.2，4.0，4.8，5.6，6.4，7.2，8.0
      100.000.8，1.6，2.4，3.2，4.0，4.8，5.6，6.4，7.2，8.0
      50.000.8，1.6，2.4，3.2，4.0，4.8，5.6，6.4，7.2，8.0
      10.000.8，1.6，2.4，3.2，4.0，4.8，5.6，6.4，7.2，8.0
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    Huan Chen, Chaoyang Wei, Zhen Cao, Xiaocong Peng, Jianda Shao. Study of Femtosecond Laser Ablation and Polishing Process on RB‑SiC Surface[J]. Chinese Journal of Lasers, 2023, 50(24): 2402203

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    Paper Information

    Category: Laser Surface Machining

    Received: Mar. 28, 2023

    Accepted: Jul. 12, 2023

    Published Online: Oct. 24, 2023

    The Author Email: Wei Chaoyang (siomwei@siom.ac.cn), Cao Zhen (caozhen@siom.ac.cn)

    DOI:10.3788/CJL230657

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology