Chinese Journal of Lasers, Volume. 46, Issue 6, 0614004(2019)

Photoelectric Characterization Technique Based on Terahertz Semiconductor Quantum-Well Devices and Its Applications

Zhiyong Tan1,2 and Juncheng Cao1,2、*
Author Affiliations
  • 1 Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    References(49)

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    [18] Schneider H, Liu H C. Quantum well infrared photodetectors: physics and applications[M]. Heidelberg: Springer, 45-81(2006).

    [40] Guerboukha H, Nallappan K, Skorobogatiy M. Toward real-time terahertz imaging[J]. Advances in Optics and Photonics, 10, 843-938(2018).

    [43] Qiu F C, Tan Z Y, Fu Z L et al. Reflective scanning imaging based on a fast terahertz photodetector[J]. Optics Communications, 427, 170-174(2018).

    [45] Zang X F, Liu S J, Cheng Q Q et al. Lower-order-symmetry induced bandwidth-controllable terahertz polarization converter[J]. Journal of Optics, 19, 115103(2017).

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    Zhiyong Tan, Juncheng Cao. Photoelectric Characterization Technique Based on Terahertz Semiconductor Quantum-Well Devices and Its Applications[J]. Chinese Journal of Lasers, 2019, 46(6): 0614004

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    Paper Information

    Category: terahertz technology

    Received: Mar. 27, 2019

    Accepted: Apr. 28, 2019

    Published Online: Jun. 14, 2019

    The Author Email: Cao Juncheng (jccao@mail.sim.ac.cn)

    DOI:10.3788/CJL201946.0614004

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