Chinese Journal of Lasers, Volume. 46, Issue 6, 0614004(2019)

Photoelectric Characterization Technique Based on Terahertz Semiconductor Quantum-Well Devices and Its Applications

Zhiyong Tan1,2 and Juncheng Cao1,2、*
Author Affiliations
  • 1 Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(26)
    Schematic of working principle of terahertz quantum-cascade laser[7]
    Output power stability of a 4.3 THz QCL in a liquid nitrogen dewar (LND)
    Schematic conduction band edge profile of the THz QWP[18]. (a) Zero bias; (b) finite bias
    Comparison of the normalized emission spectra of three THz QCLs and the normalized photocurrent spectrum of a THz QWP
    Emission spectra of the THz QCL, under different drive currents, measured by THz QWP (dash line) and DTGS-PE (solid line), respectively[33]
    Schematic of the setup measuring the peak pulse power of the THz QCL by using a THz QWP
    Current responsivity with the bias under different temperatures of a standard THz QWP
    Comparison of the emission spectrum of the THz QCL and the photocurrent spectrum of the THz QWP
    Modulation signal waveform applied to the THz QCL (lower) and response signal of the THz QWP (upper)
    Transmittance spectrum of the 3 mm-thick HDPE window fixed on the cryostat used for THz QWP
    Schematic of the setup for calibrating the responsivityof THz QWP based on a single frequency laser
    Comparison of the emission spectrum of a single frequency THz QCL (solid line) and the photocurrent spectrum of a THz QWP (dash line)
    2D profile of the converging spot in the area equal to the sensitive facet of the THz QWP
    Peak current responsivity calibration curves of the 3.22 THz QWP under different temperature conditions
    Photograph of the THz QWP with transmission line packaging
    Schematic of high speed modulation and fast direct detection setup based on THz QWP and THz QCL[38]
    Waveform comparison of the drive signal of THz QCL (lower) and the response signal of THz QWP (upper)[38]. (a) 300 MHz; (b) 500 MHz
    Schematic of scanning reflection imaging setup based on THz QWP and THz QCL[42]
    Optical photograph (upper) and the THz reflected image (lower) of logo on the surface of a U-disk[42]
    (a) Photograph of the fast THz imaging system and (b) pattern of the converged beam spot
    Images of a printed letter ‘F’ under visible and THz radiation. (a) Photograph under visible light; (b) result of visible scanning imaging; (c) result of THz scanning imaging
    Schematic of a mini-type OAP coupled setup and the output THz beam
    Two-dimensional beam pattern of the THz light at a certain distance from the THz QCL end facet. (a) The distance is 150 mm, no aperture; (b) the distance is 150 mm, with aperture; (c) the distance is 200 mm, with aperture
    Amplitude curves and the corresponding Gauss fitting curve of the quasi-Gauss distributed THz beam spot at X=0 pixel and Y=0 pixel (inset: 2D profile of the THz beam spot)
    Photographs of the THz QWP and the coupling Winston cone fixed in the liquid He dewar, and schematic of gathering THz light
    Comparison between the inner diameter of entrance of a Winston cone (circle) and the size of the THz QWP (square)
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    Zhiyong Tan, Juncheng Cao. Photoelectric Characterization Technique Based on Terahertz Semiconductor Quantum-Well Devices and Its Applications[J]. Chinese Journal of Lasers, 2019, 46(6): 0614004

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    Paper Information

    Category: terahertz technology

    Received: Mar. 27, 2019

    Accepted: Apr. 28, 2019

    Published Online: Jun. 14, 2019

    The Author Email: Cao Juncheng (jccao@mail.sim.ac.cn)

    DOI:10.3788/CJL201946.0614004

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