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Chinese Journal of Lasers, Volume. 46, Issue 6, 0614004(2019)

Photoelectric Characterization Technique Based on Terahertz Semiconductor Quantum-Well Devices and Its Applications

Zhiyong Tan1,2 and Juncheng Cao1,2、*
Author Affiliations
  • 1 Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    Article index updated: Mar. 10, 2025

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    Zhiyong Tan, Juncheng Cao. Photoelectric Characterization Technique Based on Terahertz Semiconductor Quantum-Well Devices and Its Applications[J]. Chinese Journal of Lasers, 2019, 46(6): 0614004

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    Paper Information

    Category: terahertz technology

    Received: Mar. 27, 2019

    Accepted: Apr. 28, 2019

    Published Online: Jun. 14, 2019

    The Author Email: Cao Juncheng (jccao@mail.sim.ac.cn)

    DOI:10.3788/CJL201946.0614004

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology