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Chinese Optics Letters, Volume. 22, Issue 11, 112501(2024)

Ultraviolet spot position measurement based on 4 H-SiC quadrant photodetectors

Peichen Yang1, Yifu Wang1, Weizong Xu1,2、*, Dong Zhou1, Fangfang Ren1,2, Dunjun Chen1, Rong Zhang1,2, Youliao Zheng1, and Hai Lu1,2、**
Author Affiliations
  • 1School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
  • 2Hefei National Laboratory, Hefei 230088, China
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    (a) Schematic diagram of the 4 H-SiC QPD. (b) Photograph of the packaged QPD. (c) Room temperature dark I-V characteristics. (d) Spectral response of the QPD.

    Fig. 1. (a) Schematic diagram of the 4 H-SiC QPD. (b) Photograph of the packaged QPD. (c) Room temperature dark I-V characteristics. (d) Spectral response of the QPD.

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    Schematic of the UV spot position measurement system based on the 4 H-SiC QPD.

    Fig. 2. Schematic of the UV spot position measurement system based on the 4 H-SiC QPD.

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    Output signal σx as a function of the spot position x under different spot sizes.

    Fig. 3. Output signal σx as a function of the spot position x under different spot sizes.

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    (a) Two-dimensional position pattern. (b) Distribution of the positioning error obtained by linear fitting.

    Fig. 4. (a) Two-dimensional position pattern. (b) Distribution of the positioning error obtained by linear fitting.

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    (a) Distribution of the position points in the position resolution measurement. Histograms of measured positions along (b) the x-direction and (c) the y-direction.

    Fig. 5. (a) Distribution of the position points in the position resolution measurement. Histograms of measured positions along (b) the x-direction and (c) the y-direction.

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    (a) Light spot geometry on the QPD surface. (b) Experimental and theoretical relationships between σx and x/r. (c) Two-dimensional position pattern. (d) Distribution of the positioning error after calibration.

    Fig. 6. (a) Light spot geometry on the QPD surface. (b) Experimental and theoretical relationships between σx and x/r. (c) Two-dimensional position pattern. (d) Distribution of the positioning error after calibration.

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    • Table 1. Summary of Some Key Parameters of Reported QPDs

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      Table 1. Summary of Some Key Parameters of Reported QPDs

      Material and StructureDark Current (nA)Responsivity (A/W)EQE (%)Area of Elements (mm2)Positioning Error (μm)Ref.
      Ga2O3 QPD1.5 (−20 V)∼6 × 10-5 (@243 nm)0.03∼15.9NA[8]
      Si QPD2 (0 V)∼0.59 (@920 nm)79.50∼100NA[26]
      Si/Ge QPD13 (−2 V)∼0.60 (@1000 nm)74.46107NA[27]
      Black Si QPD5.4 (−10 V)∼0.53 (@1060 nm)62.0512.56NA[28]
      InGaAs QPD5 (−1 V)∼0.95 (@1550 nm)76.003.14NA[29]
      Si QPD40 (−15 V)∼0.02 (@254 nm)9.761.25NA[30]
      4 H-SiC QPD (This work)0.018 (−20 V)∼0.10 (@254 nm) ∼0.111 (@275 nm)48.81 49.951628.5This work
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    Peichen Yang, Yifu Wang, Weizong Xu, Dong Zhou, Fangfang Ren, Dunjun Chen, Rong Zhang, Youliao Zheng, Hai Lu, "Ultraviolet spot position measurement based on 4 H-SiC quadrant photodetectors," Chin. Opt. Lett. 22, 112501 (2024)

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    Paper Information

    Category: Optoelectronics

    Received: Mar. 25, 2024

    Accepted: Jun. 2, 2024

    Published Online: Nov. 26, 2024

    The Author Email: Weizong Xu (wz.xu@nju.edu.cn), Hai Lu (hailu@nju.edu.cn)

    DOI:10.3788/COL202422.112501

    CSTR:32184.14.COL202422.112501

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology