Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

Yanxin Wang; Jiye Li; Fayang Liu; Dongxiang Luo; Yunping Wang; Shengdong Zhang; Lei Lu

doi:10.1088/1674-4926/44/9/092601

Journal of Semiconductors, Volume. 44, Issue 9, 092601(2023)

Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

Yanxin Wang¹, Jiye Li¹, Fayang Liu¹, Dongxiang Luo², Yunping Wang¹, Shengdong Zhang^1,3, and Lei Lu^1、*

Author Affiliations

¹School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China

²Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, China

³Institute of Microelectronics, Peking University, Beijing 100871, China

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References(28)

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Yanxin Wang, Jiye Li, Fayang Liu, Dongxiang Luo, Yunping Wang, Shengdong Zhang, Lei Lu. Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors[J]. Journal of Semiconductors, 2023, 44(9): 092601

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Paper Information

Category: Articles

Received: May. 15, 2023

Accepted: --

Published Online: Oct. 25, 2023

The Author Email: Lu Lei (lulei@pku.edu.cn)

DOI:10.1088/1674-4926/44/9/092601

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