Journal of Semiconductors, Volume. 44, Issue 9, 092601(2023)

Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

Yanxin Wang1, Jiye Li1, Fayang Liu1, Dongxiang Luo2, Yunping Wang1, Shengdong Zhang1,3, and Lei Lu1、*
Author Affiliations
  • 1School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
  • 2Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, China
  • 3Institute of Microelectronics, Peking University, Beijing 100871, China
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    Figures & Tables(5)
    (Color online) Schematic cross-section of the fabricated SATG a-IGZO TFTs.
    (Color online) (a) Transfer curves measured at Vds = 0.1 V from original a-IGZO TFT and a-IGZO TFT experienced output curve sweeping to Stage- Ⅱ. (b) Output characteristic and output resistance curves of the a-IGZO TFT at Vgs = 20 V. Three stages are divided and labeled with Ⅰ, Ⅱ and Ⅲ, respectively.
    (Color online) The mechanism of SH-induced defect transition, illustrated in the density of states (DOS) in a-IGZO.
    (Color online) Output characteristic and output resistance curves of a-IGZO:F TFT at Vgs = 20 V.
    (Color online) The evolution of Id of a-IGZO and a-IGZO:F TFTs under SH stresses of the same initial power.
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    Yanxin Wang, Jiye Li, Fayang Liu, Dongxiang Luo, Yunping Wang, Shengdong Zhang, Lei Lu. Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors[J]. Journal of Semiconductors, 2023, 44(9): 092601

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    Paper Information

    Category: Articles

    Received: May. 15, 2023

    Accepted: --

    Published Online: Oct. 25, 2023

    The Author Email: Lu Lei (lulei@pku.edu.cn)

    DOI:10.1088/1674-4926/44/9/092601

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