Journal of Semiconductors, Volume. 44, Issue 9, 092601(2023)
Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors
Figures & Tables(5)
Fig. 1. (Color online) Schematic cross-section of the fabricated SATG a-IGZO TFTs.
Fig. 2. (Color online) (a) Transfer curves measured at Vds = 0.1 V from original a-IGZO TFT and a-IGZO TFT experienced output curve sweeping to Stage- Ⅱ. (b) Output characteristic and output resistance curves of the a-IGZO TFT at Vgs = 20 V. Three stages are divided and labeled with Ⅰ, Ⅱ and Ⅲ, respectively.
Fig. 3. (Color online) The mechanism of SH-induced defect transition, illustrated in the density of states (DOS) in a-IGZO.
Fig. 4. (Color online) Output characteristic and output resistance curves of a-IGZO:F TFT at Vgs = 20 V.
Fig. 5. (Color online) The evolution of Id of a-IGZO and a-IGZO:F TFTs under SH stresses of the same initial power.
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Yanxin Wang, Jiye Li, Fayang Liu, Dongxiang Luo, Yunping Wang, Shengdong Zhang, Lei Lu. Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors[J]. Journal of Semiconductors, 2023, 44(9): 092601
Paper Information
Category: Articles
Received: May. 15, 2023
Accepted: --
Published Online: Oct. 25, 2023
The Author Email: Lu Lei (lulei@pku.edu.cn)
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