Chinese Journal of Lasers, Volume. 47, Issue 4, 401005(2020)

ICP Etching Process of GaAs/AlGaAs for Vertical-Cavity Surface-Emitting Lasers

Wang Yu1,2, Zhou Yanping2、*, Li Maolin2, Zuo Chao2, and Yang Bingjun2
Author Affiliations
  • 1School of Science, Changchun University, Changchun, Jilin 130022, China
  • 2ULVAC Research Center Suzhou Co., Ltd., Suzhou, Jiangsu 215026, China
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    Figures & Tables(9)
    Schematic of GaAs/AlGaAs sample wafer and Si chip
    Schematic of etching process
    Etching rate versus ICP antenna power
    SEM images of GaAs/AlGaAs etching profile for different ICP antenna powers. (a) 800 W; (b) 1400 W; (c) 1600 W
    Etching rate versus RF bias power
    SEM images of GaAs/AlGaAs etching profile for different RF bias powers. (a) 300 W; (b) 500 W; (c) 600 W
    Curves of etching rate with cavity pressure
    SEM images of GaAs/AlGaAs etching profile for different cavity pressures. (a) 0.8 Pa; (b) 1.2 Pa; (c) 1.4 Pa
    SEM image of the final etching result. (a) Sample table; (b) sample profile
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    Wang Yu, Zhou Yanping, Li Maolin, Zuo Chao, Yang Bingjun. ICP Etching Process of GaAs/AlGaAs for Vertical-Cavity Surface-Emitting Lasers[J]. Chinese Journal of Lasers, 2020, 47(4): 401005

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    Paper Information

    Category: laser devices and laser physics

    Received: Oct. 14, 2019

    Accepted: --

    Published Online: Apr. 8, 2020

    The Author Email: Yanping Zhou (yanping_zhou@ulvac.com)

    DOI:10.3788/CJL202047.0401005

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