We use inductively coupled plasma (ICP) etching equipment to study the etching process for GaAs/AlGaAs materials used in vertical-cavity surface-emitting lasers. During the ICP etching process, photoresist is used as the etching mask, whereas Cl2/BCl3 is used as the etching gas. The ICP antenna power, radio frequency bias power, and cavity pressure in case of the GaAs/AlGaAs materials and masks are analyzed and summarized through experiments. Further, scanning electron microscopy is used to investigate the effects of different parameter conditions on the verticality and bottom flatness of the pattern sidewalls. Finally, a round-table structure with smooth sidewalls and flat bottom is obtained by adjusting and optimizing the parameters during each process to ensure a high etching rate.