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Chinese Journal of Lasers, Volume. 51, Issue 17, 1703001(2024)

Characterization of Backscattered Electrons in EBCMOS

Meng Lv1, De Song1、*, Gangcheng Jiao2, Ye Li1, Liankai Wang1, and Weijun Chen1、**
Author Affiliations
  • 1School of Physics, Changchun University of Science and Technology, Changchun 130022, Jilin , China
  • 2Science and Technology on Low-Light-Level Night Vision Laboratory, Xi′an710065, Shaanxi , China
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    [1] Zhang Y T, Cao K Q, Sun D X et al. Low light level detection based on scientific CMOS image sensor with high sensitivity and low noise[J]. Laser & Optoelectronics Progress, 55, 080401(2018).

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    [4] Wang W, Li Y, Chen W J et al. Simulation of the electrostatic distribution in the proximity focusing structure of an EBCMOS[J]. IEEE Photonics Journal, 12, 6901210(2020).

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    [7] Cajgfinger T, Dominjon A, Barbier R. Single photon detection and localization accuracy with an ebCMOS camera[J]. Nuclear Inst. and Methods in Physics Research, 787176-181(2015).

    [8] Barbier R, Depasse P, Baudot J et al. First results from the development of a new generation of hybrid photon detector: EBCMOS[M]. Astroparticle, particle and space physics, detectors and medical physics applications, 23-27(2008).

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    [11] Yan Y Y, Qian Y S, Zhang J Z et al. Design of spectral response test system for electron bombardment active pixel sensor[J]. Laser & Optoelectronics Progress, 59, 1304001(2022).

    [12] Jiao G C, Song D, Yan L et al. Simulation of charge collection efficiency optimization for EBCMOS with uniform and gradient doping[J]. Chinese Journal of Lasers, 51, 0210001(2024).

    [13] Piao X, Shi F, Song J et al. Simulation of multiplying electron distribution in electron multiplier layer for EBAPS[J]. Proceedings of SPIE, 10141, 101410W(2016).

    [14] Song D, Zhou J Q, Mu Y N et al. Testing system of multiplying electron gain for electron bombarded semiconductor[J]. Proceedings of SPIE, 10697, 106970T(2018).

    [15] Tian J F, Song D, Chen W J et al. Influence of doping distribution in electron multiplier surface layer on charge collection efficiency of EBCMOS[J]. Semiconductor Optoelectronics, 42, 45-51, 105(2021).

    [16] Yang L H, Hussain A, Mao S F et al. Electron backscattering coefficients of molybdenum and tungsten based on the Monte Carlo simulations[J]. Journal of Nuclear Materials, 553, 153042(2021).

    [17] Zhong W J S, Williams J A. Etchable core glass compositions and method for manufacturing a high performance microchannel plate[P].

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    [19] Wang X N, Song D, Jiao G C et al. Characterising backscattered electrons in EBCMOS[J]. IEEE Photonics Journal, 14, 6858605(2022).

    [20] Hussain A, Yang L H, Mao S F et al. Determination of electron backscattering coefficient of beryllium by a high-precision monte carlo simulation[J]. Nuclear Materials and Energy, 26, 100862(2021).

    [21] Goldstein J I, Newbury D E, Michael J R et al[M]. Scanning electron microscopy and X-ray microanalysis(2018).

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    Meng Lv, De Song, Gangcheng Jiao, Ye Li, Liankai Wang, Weijun Chen. Characterization of Backscattered Electrons in EBCMOS[J]. Chinese Journal of Lasers, 2024, 51(17): 1703001

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    Paper Information

    Category: Materials

    Received: Nov. 28, 2023

    Accepted: Feb. 26, 2024

    Published Online: Aug. 30, 2024

    The Author Email: Song De (songde614@163.com), Chen Weijun (chenweijun@cust.edu.cn)

    DOI:10.3788/CJL231449

    CSTR:32183.14.CJL231449

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology