Fig. 1. Trajectory of incident electron in BSB-CMOS and characteristic parameters of backscattered electron

Fig. 2. Backscattered electron characteristics in device with different passivation layer materials. (a) R_BI of different passivation layers; (b) distribution of D_BI; (c) distribution of θ_B; (d) distribution of Φ_B

Fig. 3. Trajectory of incident electron and backscattered electron characteristics with different passivation layer thicknesses. (a) Trajectory of incident electron with different passivation layer thickness; (b) R_BI with different passivation layer_{thicknesses; (c) distribution of DBI; (d) distribution of θB; (e) distribution of ΦB}

Fig. 4. Backscattered electron characteristics for device with different incident electron beam diameters. (a) R_BI with different incident electron beam diameters; (b) distribution of D_BI; (c) distribution of θ_B; (d) distribution of Φ_B

Fig. 5. Incident electron trajectory diagram and backscattered electron characteristic parameters with different incident energies.(a) incident electron trajectory diagram with different incident energies; (b) R_BI with different incident energies; (c) distribution of D_BI; (d) distribution of θ_B; (e) distribution of Φ_B

Fig. 6. R_BI distribution of backscattered electrons of three passivation layer materials at different incident electron energies