Acta Optica Sinica, Volume. 44, Issue 4, 0431002(2024)

Preparation of X-Ray Multilayers Based on Atomic Layer Deposition

Lü Wensi1,2, Hongchang Wu1,3, Yanli Li1、*, Xiangdong Kong1,2、**, and Li Han1,2
Author Affiliations
  • 1Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
  • 2School of Electronic, Electrical, and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, Gansu , China
  • show less
    Figures & Tables(8)
    Structure diagram of HfO2/Al2O3 multilayers
    Diagram of reflectance calculation for multilayers
    Relationship between reflectivity of multilayer films of different film systems and grazing angle of X-rays. (a) Changes in reflectivity of multilayer films of different film systems at grazing angles from 0° to 7°; (b) reflectivity of multilayer films of different film systems at primary diffraction peak
    Relationship between reflectivity of HfO2/Al2O3 multilayer films with different periods and grazing angle of X-rays
    Variation of reflectivity of HfO2/Al2O3 multilayers with duty ratio
    Variation of reflectivity of HfO2/Al2O3 multilayers with number of periods
    Cross-sectional TEM images of HfO2/Al2O3 multilayers. (a) Cross-sectional TEM image of 50 layers HfO2/Al2O3 stack films; (b) TEM image after magnification
    X-ray reflectivity measurement and fitting results of HfO2/Al2O3 multilayers
    Tools

    Get Citation

    Copy Citation Text

    Lü Wensi, Hongchang Wu, Yanli Li, Xiangdong Kong, Li Han. Preparation of X-Ray Multilayers Based on Atomic Layer Deposition[J]. Acta Optica Sinica, 2024, 44(4): 0431002

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Thin Films

    Received: Jul. 31, 2023

    Accepted: Dec. 12, 2023

    Published Online: Feb. 23, 2024

    The Author Email: Yanli Li (liyanli@mail.iee.ac.cn), Xiangdong Kong (slkongxd@mail.iee.ac.cn)

    DOI:10.3788/AOS231331

    CSTR:32393.14.AOS231331

    Topics