Journal of Infrared and Millimeter Waves, Volume. 39, Issue 5, 583(2020)
Figures & Tables(19)
![The dark current of MBE grown HgCdTe detector material is shown for an 18-μm pixel. Typical InSb dark current is also shown as a comparison[7]](/Images/icon/loading.gif){kind=icon}
Fig. 1. The dark current of MBE grown HgCdTe detector material is shown for an 18-μm pixel. Typical InSb dark current is also shown as a comparison[7]
Fig. 2. The temperature dependence of the four dark current sources and their combination [13]
Fig. 3. Temperature dependence of the dark current of InGaAs extended wavelength photodetector[23]
Fig. 4. Extended wavelength InGaAs detectors: Arrhenius plot of the dark current VS temperature for the 10×10 test array at a reverse bias of -100 mV[20]
Fig. 5. Modeled dark current components for SWIR HgCdTe/Si diode at 295 K[26]
Fig. 6. Average pixel dark current (with cold shield) vs temperature for 2.5 μm cutoff HgCdTe/CdZnTe photodetector, comparison with Rule-07[30]
Fig. 7. Dark current characteristics of MWIR InAs/InAsSb nBn detector: (a) Measured dark current density VS applied bias in the temperature range T=120~300 K as indicated. (b) The Arrhenius plot of dark current density VS inverse photodiode temperature measured at applied bias V=-0.1 V [41]
Fig. 8. Measured and modeled current density versus inverse temperature of HgCdTe/CdTe/GaAs [40]
Fig. 9. Schematic illustration of the InAs/GaSb T2SL interband cascade infrared photodetectors: (a) photocarrier dynamics, and (b) dark current dynamics in ICIPs[41]
Fig. 10. p+/v/n+ HgCdTe LWIR PV detector: (a) Experimental values for Jmax versus temperature (b) Experimental values for Jmin versus temperature[52]
Fig. 11. Arrhenius plot of R0A for InAs/GaSb T2SL ICIP devices from wafers in set #3 [53]
Fig. 12. GaAs/AlGaAs QCD: Detectivities of N1020, N1021, and N1022 as function of temperature. The dashed lines on top represent the background limited detectivity for a hemispherical FOV and a background temperature of 300 K[57]
Fig. 13. Saturation current density for IS(intersubband) and IB(interband) quantum cascade devices at room temperature[62]
Fig. 14. Recent progress of the SITP(CAS) in near-and mid-wavelength infrared: (a) Dark current development of Near-IR InGaAs FPAs[17] (b) Measured R0A and D* for the one- (ICIP-1) and two-stage (ICIP-2) interband cascade photo detectors at a wide range of temperature. Also shown the Ea and dark current mechanisms[47]
Table 1. InGaAs近红外探测器室温性能最新报道
View tableView in ArticleTable 1. InGaAs近红外探测器室温性能最新报道
国家 制造商 年份 面阵规模/中心距
(μm)
截止波长 暗电流
(偏压=-0.1V)
其他性能指标 USA Aerius 2009[ 10 ]1280×1024，10 ~1.67 μm 0.5nA/cm2@280K 量子效率=80% 2011[ 11 ]640×512，25 ~1.6 μm 1.5 nA/cm2@293K 量子效率>70% Teledyne/ Judson 2012[ 12 ]1280×1024，12.5 ~1.7 μm 2 nA/cm2@298K Spectrolab 2014[ 13 ]1280×1024，12.5 ~1.7 μm 0.7nA/cm2@298K 量子效率>80% France Sofradir 2012[ 14 ]640×512，15 ~1.7 μm 7.5 nA/cm2@295K 2015[ 15 ]640×512，15 ~1.7 μm 5.5 nA/cm2@RT* Israel SCD 2016[ 16 ]1280×1024，10 ~1.7 μm 0.5nA/cm2@280K 量子效率>80%@1.55μm China SITP, CAS 2016[ 17 ]640×512，25 ~1.7 μm ~5nA/cm2 量子效率=90%@1.55μm
探测率>2×1012cm·Hz1/2/W@RT*
Table 2. InGaAs延伸波长探测器室温性能最新报道
View tableView in ArticleTable 2. InGaAs延伸波长探测器室温性能最新报道
国家 制造商 年份 面阵规模/中心距(μm) 截止波长 暗电流
(偏压=-0.1V)
其他性能指标 USA UTC Aerospace Systems 2016[ 20 ]320×256,12.5 ~2.5μm 0.29mA/cm2@293K 零偏电阻(R0A)=83.2Ω/cm2 @293K
峰值量子效率=60%@1.7μm
Teledyne/Judson 2019[ 21 ]640× 512 ~2.6μm 0.5mA/cm2@295K 峰值响应率=1.20A/W
峰值探测率=4.7×1010 cm·Hz1/2/W
Turkey Middle East Technical University 2014[ 22 ]640×512,20 ~2.65μm 7.5mA/cm2@300K 峰值探测率=2.5×1010cm·Hz1/2/W@300K China SITP, CAS 2017[ 23 ]512×256,30 ~2.55μm 2.2mA/cm2@296K 探测率>5×1011 cm·Hz1/2/W@200K
峰值量子效率>80%
Table 3. HgCdTe短波红外探测器室温性能的最新报道
View tableView in ArticleTable 3. HgCdTe短波红外探测器室温性能的最新报道
国家 制造商 年份 面阵规模/
中心距
(μm)
材料 截止波长 暗电流(bias=-0.1V) 其他性能指标 USA EPIR 2014[ 26 ]320×256，
30
HgCdTe/Si ~2.65 μm ~20mA/cm2@296K 量子效率>70% 2016[ 27 ]640×512，
10
HgCdTe/ CdTe/Si ~2.59 μm ~7mA/cm2@296K Teledyne/Judson 2016[ 28 ]4096×4096 HgCdTe/CdZnTe ~2.45 μm 0.0055e-@-0.25V,80K 峰值量子效率>90%@1.5μm 2018[ 29 ]320×256，
30
HgCdTe/CdZnTe ~2.5 μm
~2.9 μm
27μA/cm2@296K*
37μA/cm2@296K*
峰值量子效率=85% France Sofradir 2012[ 30 ]384×288，
15
HgCdTe/CdZnTe ~2.45 μm 0.5mA/cm2@300K*
Table 4. 中波红外探测器近室温性能的最新报道
View tableView in ArticleTable 4. 中波红外探测器近室温性能的最新报道
国家 制造商/机构 年份 材料 截止波长 暗电流 其他性能指标 USA J P Lab 2016[ 36 ]InAsSb/InSb T2SL nBn ~4.6 μm 5μA/cm2@150K，-0.1V
0.1A/cm2@250K
量子效率=45%
峰值探测率=8×109cm·Hz1/2/W@250K
2018[ 37 ]InAsSb/InSb T2SL nBn ~4.5 μm 1A/cm2@290K，-0.1V 峰值探测率=2.75×1010cm·Hz1/2/W
@250K
2018[ 38 ]InAs/InAsSb T2SL ~5.37 μm
@150 K
96μA/cm2@157K，-0.2V
50 mA/cm2@222K
量子效率=52%@4.5μm
噪声等效温差=18.7mK@160K
NWU 2019[ 39 ]InAs/InAsSb T2SL nBn ~4.5 μm 2A/cm2@300K，-0.1V 峰值响应率= 0.65A/W@1.9μm ,300K, NVESD 2012[ 40 ]HgCdTe/CdTe/GaAs ~4.2 μm
@150 K
10mA/cm2@300K，-50mV Univ. Oklah. 2012[ 41 ]InAs/GaSb T2SL ICIP ~4.7 um
@300 K
2.7μA/cm2@150K，-0.05V，
28mA/cm2@300K，-0.05V
探测率=2×109cm·Hz1/2/W@300K
R0A=1.87Ω·cm2@300K
France Sofradir 2015[ 42 ]InSb/InAlSb nBn ~5.4 μm 1nA/cm2@120K, -0.05V 2016[ 43 ]HgCdTe/CdZnTe ~4.2 μm 30mA/cm2@295K，-0.1V Isreal SCD 2019[ 44 ]XBn-InAsSb ~4.2 μm 0.7μA/cm2@150K，-0.1V Poland MUT 2014[ 45 ]HgCdTe p+B-p-n-N+ ~3.6 um
@300 K
0.15mA/cm2@230K
8mA/cm2@290K，-0.1V
峰值响应率=2 A/W China Inst. of Semi, CAS 2017[ 46 ]InAs/GaSb T2SL ~4.8 μm 0.08mA/cm2@140K，-0.1V
8A/cm2@300K，-0.1V
SITP, CAS 2016[ 47 ]InAs/GaSb T2SL ICIP ~4.8 μm 探测率=1.23 × 109 cm·Hz1/2/W
@300K
量子效率=19.8%@300K
R0A=0.06Ω·cm2@300K
2019[ 48 ]InAs/GaSb T2SL ICIP ~5.3 μm 0.3mA/cm2@148K，-0.1V
3.97A/cm2@304K，-0.1V
峰值响应率=1.2A/W@4.3μm ,146K
Table 5. 长波红外探测器近室温性能最新报道
View tableView in ArticleTable 5. 长波红外探测器近室温性能最新报道
国家 制造商/机构 年份 材料/器件结构 截止波长 暗电流/R0A 其他性能指标 USA EPIR 2010[ 52 ]HgCdTe ~10.4 μm@100 K
~7.4 μm@250 K
~5A/cm2
@300K, -0.1V
Univ. Oklah. 2016[ 53 ]InAs/GaSb T2SL ICIP ~8 μm@300 K ~0.8Ω·cm2@200K*，
~0.0082Ω·cm2
@300K*
探测率=1×108 cm·Hz1/2/W
@300K
Poland MUT 2018[ 54 ]InAs/InAsSb T2SL ~9.8 μm@210 K
~10.4μm@230 K
探测率=2×1010 cm·Hz1/2/W
@210K
2016[ 55 ]HgCdTe barrier ~9μm@230K ~10A@230K, -0.1V 探测率=2×109 cm·Hz1/2/W @230K 2019[ 56 ]HgCdTe ~9μm@300K 探测率>2×108 cm·Hz1/2/W
@300K
Swiss Univ. Neuch. 2009[ 57 ]GaAs/AlGaAs QCD Peak wavelength
@7.5μm and
@10μm
探测率=1×107cm·Hz1/2/W
@300K，7.5μm and
1×107cm·Hz1/2/W@300K,10μm
Austria Vienna Univ. Tech 2014[ 58 ]InGaAs/
InAlAs QCD
Peak wavelength
@8μm
峰值响应率=16.9mA/W
@8μm,300K
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Tian XIE, Xin-Hui YE, Hui XIA, Ju-Zhu LI, Shuai-Jun ZHANG, Xin-Yang JIANG, Wei-Jie DENG, Wen-Jing WANG, Yu-Ying LI, Wei-Wei LIU, Xiang LI, Tian-Xin LI.
Paper Information
Category: Materials and Devices
Received: Dec. 31, 2019
Accepted: --
Published Online: Dec. 29, 2020
The Author Email: Xiang LI (xiangli@usst.edu.cn), Tian-Xin LI (txli@mail.sitp.ac.cn)
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