Journal of Infrared and Millimeter Waves, Volume. 39, Issue 5, 583(2020)

Research progress of room temperature semiconductor infrared photodetectors

Tian XIE1,2, Xin-Hui YE1,2, Hui XIA2, Ju-Zhu LI2,3, Shuai-Jun ZHANG1,2, Xin-Yang JIANG2,4, Wei-Jie DENG2,4, Wen-Jing WANG2,3, Yu-Ying LI2, Wei-Wei LIU2, Xiang LI1、*, and Tian-Xin LI2、*
Author Affiliations
  • 1School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai200093, China
  • 2State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
  • 3Mathematics and Science College, Shanghai Normal University, Shanghai200234, China
  • 4School of Physical Science and Technology, Shanghai Tech University, Shanghai201210, China
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    Room temperature operation of infrared photon detectors will open up a wider range of applications. This article summarizes the room temperature performance and dark current mechanism of semiconductor devices from near infrared to long wavelength infrared. Different methods to suppress dark current including the design of the interband cascade structure of InAs/GaSb type Ⅱ superlattices and the nonequilibrium operation mode of HgCdTe to suppress the Auger process show unique advantages. These electronic structural designs, combined with the latest progress in subwavelength photonic structures to enhance light coupling and reduce dark current, hold the promise to achieve a high performance infrared imaging chip operating in room temperature in the near future.

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    Tian XIE, Xin-Hui YE, Hui XIA, Ju-Zhu LI, Shuai-Jun ZHANG, Xin-Yang JIANG, Wei-Jie DENG, Wen-Jing WANG, Yu-Ying LI, Wei-Wei LIU, Xiang LI, Tian-Xin LI. Research progress of room temperature semiconductor infrared photodetectors[J]. Journal of Infrared and Millimeter Waves, 2020, 39(5): 583

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    Paper Information

    Category: Materials and Devices

    Received: Dec. 31, 2019

    Accepted: --

    Published Online: Dec. 29, 2020

    The Author Email: Xiang LI (xiangli@usst.edu.cn), Tian-Xin LI (txli@mail.sitp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2020.05.008

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