[1] Ning Y Q, Chen Y Y, Zhang J et al. Brief review of development and techniques for high power semiconductor lasers[J]. Acta Optica Sinica, 41, 0114001(2021).

[2] Körner J, Jambunathan V, Hein J et al. Spectroscopic characterization of Yb3＋-doped laser materials at cryogenic temperatures[J]. Applied Physics B, 116, 75-81(2014).

[3] Crump P, Frevert C, Hösler H et al. Cryogenic ultra-high power infrared diode laser bars[J]. Proceedings of SPIE, 9002, 90021I(2014).

[4] Peters M, Rossin V, Everett M et al. High-power, high-efficiency laser diodes at JDSU[J]. Proceedings of SPIE, 6456, 64560G(2007).

[5] An Z F, Lin L, Xu H W et al. 976 nm high efficiency semiconductor lasers[J]. Semiconductor Technology, 36, 345-347(2011).

[6] Zhao Y L, Wang Z F, Yang G W et al. Research on 940 nm kilowatt high efficiency quasi-continuous diode laser bars[J]. Proceedings of SPIE, 11170, 1117040(2019).

[7] Chen L H, Yang G W, Liu Y X. Development of semiconductor lasers[J]. Chinese Journal of Lasers, 47, 0500001(2020).

[8] Frevert C, Crump P, Bugge F et al. Study of waveguide designs for high-power 9xx-nm diode lasers operating at 200 K[J]. Proceedings of SPIE, 8965, 89650O(2014).

[9] Crump P A, Tränkle G. A brief history of kilowatt-class diode-laser bars[J]. Proceedings of SPIE, 11301, 113011D(2020).

[10] Crump P, Grimshaw M, Wang J et al. 85% power conversion efficiency 975-nm broad area diode lasers at－50℃，76% at 10 ℃[C](2006).

[11] Frevert C, Bugge F, Knigge S et al. 940 nm QCW diode laser bars with 70% efficiency at 1 kW output power at 203 K: analysis of remaining limits and path to higher efficiency and power at 200 K and 300 K[J]. Proceedings of SPIE, 9733, 97330L(2016).

[12] Wang J, Smith B, Xie X M et al. High-efficiency diode lasers at high output power[J]. Applied Physics Letters, 74, 1525-1527(1999).

[13] Frevert C, Crump P, Bugge F et al. The impact of low Al-content waveguides on power and efficiency of 9xx nm diode lasers between 200 and 300 K[J]. Semiconductor Science and Technology, 31, 025003(2016).

[14] Leisher P O, Dong W M, Grimshaw M P et al. Mitigation of voltage defect for high-efficiency InP diode lasers operating at cryogenic temperatures[J]. IEEE Photonics Technology Letters, 22, 1829-1831(2010).

[15] Crump P, Erbert G, Wenzel H et al. Efficient high-power laser diodes[J]. IEEE Journal of Selected Topics in Quantum Electronics, 19, 1501211(2013).

[16] Man Y X, Zhong L, Ma X Y et al. 975 nm semiconductor lasers with ultra-low internal optical loss[J]. Acta Optica Sinica, 40, 1914001(2020).

[17] Shur M, Singh J. Physics of semiconductor devices[J]. Physics Today, 43, 98-99(1990).

[18] Song Y F, Wang Z F, Li T et al. Efficiency analysis of 808 nm laser diode array under different operating temperatures[J]. Acta Physica Sinica, 66, 104202(2017).