Low-Temperature Characteristics of Ultra-High Efficiency 940 nm Semiconductor Laser Bars

Yongkang Ding; Li Zhou; Shaoyang Tan; Guoliang Deng; Jun Wang

doi:10.3788/CJL202249.1101004

Chinese Journal of Lasers, Volume. 49, Issue 11, 1101004(2022)

Low-Temperature Characteristics of Ultra-High Efficiency 940 nm Semiconductor Laser Bars

Yongkang Ding^1,2, Li Zhou^1,2, Shaoyang Tan^1,2, Guoliang Deng¹, and Jun Wang^1,2、*

Author Affiliations

¹College of Electronic Information, Sichuan University, Chengdu 610041, Sichuan, China

²Suzhou Everbright Photonics Co., Ltd., Suzhou 215009, Jiangsu, China

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Yongkang Ding, Li Zhou, Shaoyang Tan, Guoliang Deng, Jun Wang. Low-Temperature Characteristics of Ultra-High Efficiency 940 nm Semiconductor Laser Bars[J]. Chinese Journal of Lasers, 2022, 49(11): 1101004

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Paper Information

Category: laser devices and laser physics

Received: Dec. 7, 2021

Accepted: Feb. 5, 2022

Published Online: Jun. 2, 2022

The Author Email: Wang Jun (wjdz@scu.edu.cn)

DOI:10.3788/CJL202249.1101004

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology