Chinese Journal of Lasers, Volume. 49, Issue 11, 1101004(2022)
Low-Temperature Characteristics of Ultra-High Efficiency 940 nm Semiconductor Laser Bars
Figures & Tables(6)
Fig. 1. Variation of internal quantum efficiency and internal loss of two structures with temperature
Fig. 2. Influences of temperature on threshold current and slope efficiency of two bars. (a) Influence on threshold current；(b) influence on slope efficiency
Fig. 3. Influence of temperature on series resistance and turn-on voltage of two bars. (a) Influence on series resistance；(b) influence on turn-on voltage
Fig. 5. Variation of maximum electro-optical conversion efficiency of two structures with temperature
Fig. 6. Variation of energy loss at the maximum electro-optical conversion efficiency with temperature. (a) Structure A；(b) structure B
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Yongkang Ding, Li Zhou, Shaoyang Tan, Guoliang Deng, Jun Wang. Low-Temperature Characteristics of Ultra-High Efficiency 940 nm Semiconductor Laser Bars[J]. Chinese Journal of Lasers, 2022, 49(11): 1101004
Paper Information
Category: laser devices and laser physics
Received: Dec. 7, 2021
Accepted: Feb. 5, 2022
Published Online: Jun. 2, 2022
The Author Email: Jun Wang (wjdz@scu.edu.cn)
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