Fig. 1. Basic characteristics of SbBi thin films. The AFM images of (a) as-deposited and (b) laser-irradiated SbBi thin films; (c) XRD patterns of as-deposited and laser-irradiated SbBi thin films; (d) absorption spectra of as-deposited SbBi thin film sample and glass substrate.

Fig. 2. Comparison of wet-etching selectivity in 17% (NH4)2S solution between as-deposited and laser-irradiated SbBi thin films. The laser irradiation power is fixed at 2 mW.

Fig. 3. AFM images of fabricated structures on SbBi thin films: (a) line-type patterns without wet-etching; (b) line-type structures after wet-etching for 5 min in 17% (NH4)2S solution; (c) dot-type structures after wet-etching for 5 min in 17% (NH4)2S solution.

Fig. 4. (a) Principle of preparation of small-period grating structures; (b) AFM image of grating structures with a period of 0.8 μm.

Fig. 5. Images of complex pattern structures. The original pictures of (a) the Star of David and (b) logo of CAS. The structures fabricated on SbBi thin films: (c) the Star of David and (d) logo of CAS.