[1] Gao K, Xu J T, Gao Z Y. Noise and error analyses of a pulse sequence image sensor[J]. Laser & Optoelectronics Progress, 59, 1011003(2022).

[2] Zhao T, Gao J, Xu J T et al. Optimized oversampling and readout circuit design for quanta image sensor[J]. Laser & Optoelectronics Progress, 58, 2403001(2021).

[3] Gething M J. Seeing to shoot advances in night vision[J]. Armada International, 44, 22-24(2019).

[4] Chrzanowski K. Review of night vision technology[J]. Opto-Electronics Review, 21, 153-181(2013).

[5] Su H N, Jung C. Low light image enhancement based on two-step noise suppression[C], 1977-1981(2017).

[6] Kusuhara F, Wakashima S, Nasuno S et al. Analysis and reduction technologies of floating diffusion capacitance in CMOS image sensor for photon-countable sensitivity[J]. ITE Transactions on Media Technology and Applications, 4, 91-98(2016).

[7] Chen Y, Xu Y, Chae Y et al. A0.7e-rms-temporal-readout-noise CMOS image sensor for low-light-level imaging[C], 384-386(2012).

[8] Ma J J, Starkey D, Rao A R et al. Characterization of quanta image sensor pump-gate jots with deep sub-electron read noise[J]. IEEE Journal of the Electron Devices Society, 3, 472-480(2015).

[9] Seo M W, Kawahito S, Kagawa K et al. A 0.27e-rms read noise 220-μV/e-conversion gain reset-gate-less CMOS image sensor with 0.11-μm CIS process[J]. IEEE Electron Device Letters, 36, 1344-1347(2015).

[10] Chen S, Fossum E R. High conversion-gain pixels in a standard CMOS image sensor process[C], 485-486(2017).

[11] Suzuki K. Parasitic capacitance of submicrometer MOSFET's[J]. IEEE Transactions on Electron Devices, 46, 1895-1900(1999).

[12] Liu X, Jin X S, Lee J H et al. A full analytical model of fringing-field-induced parasitic capacitance for nano-scaled MOSFETs[J]. Semiconductor Science and Technology, 25, 015008(2010).

[13] Wang M, Ke D M, Xu C X et al. A 2-D semi-analytical model of parasitic capacitances for MOSFETs with high k gate dielectric in short channel[J]. Solid-State Electronics, 92, 35-39(2014).