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Laser & Optoelectronics Progress, Volume. 60, Issue 19, 1926001(2023)

Modeling and Analysis of Parasitic Capacitance in 4-Transistor Pixels Based on Self-Alignment Technique

Yajuan Du1,2, Jing Gao1,2、*, Zhiyuan Gao1,2, and Kaiming Nie1,2
Author Affiliations
  • 1School of Microelectronics, Tianjin University, Tianjin 300072, China
  • 2Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin 300072, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (10)
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    References (13)
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    Figures & Tables(10)
    Schematic of the parasitic capacitance of the FD node

    Fig. 1. Schematic of the parasitic capacitance of the FD node

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    Schematic diagram of the potential distribution of transfer gate and FD

    Fig. 2. Schematic diagram of the potential distribution of transfer gate and FD

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    Schematic representations of the change in FD node with increasing injection dose. (a) Low injection dose; (b) increased injection dose; (c) large injection dose

    Fig. 3. Schematic representations of the change in FD node with increasing injection dose. (a) Low injection dose; (b) increased injection dose; (c) large injection dose

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    Structure of FD node simulated by TCAD

    Fig. 4. Structure of FD node simulated by TCAD

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    Trends of the FD parasitic capacitance with the injection dose

    Fig. 5. Trends of the FD parasitic capacitance with the injection dose

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    Variation of the electrostatic potential at the boundary of transfer gate with the injection dose

    Fig. 6. Variation of the electrostatic potential at the boundary of transfer gate with the injection dose

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    Optimization of the potential under the sidewall by the tilt injection. (a) Only one vertical injection performed at the FD node; (b) "vertical + tilt" injection performed at the FD node

    Fig. 7. Optimization of the potential under the sidewall by the tilt injection. (a) Only one vertical injection performed at the FD node; (b) "vertical + tilt" injection performed at the FD node

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    Dependence between FD parasitic capacitance and injected energy

    Fig. 8. Dependence between FD parasitic capacitance and injected energy

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    Dependence between FD parasitic capacitance and VFD

    Fig. 9. Dependence between FD parasitic capacitance and VFD

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    Dependence between FD parasitic capacitance and LFD

    Fig. 10. Dependence between FD parasitic capacitance and LFD

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    Yajuan Du, Jing Gao, Zhiyuan Gao, Kaiming Nie. Modeling and Analysis of Parasitic Capacitance in 4-Transistor Pixels Based on Self-Alignment Technique[J]. Laser & Optoelectronics Progress, 2023, 60(19): 1926001

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    Paper Information

    Category: Physical Optics

    Received: Apr. 11, 2022

    Accepted: Jun. 13, 2022

    Published Online: Sep. 28, 2023

    The Author Email: Jing Gao (gaojing@tju.edu.cn)

    DOI:10.3788/LOP221253

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology