Fig. 1. Cross section of new poly-silicon device

Fig. 2. Energy distributions of electrons and holes in the conduction band and valence band of Si for various excitation conditions, momentum changes, and possible subsequent photonic transitions

Fig. 3. Electrons and holes movement in the device at 25 V bias voltage

Fig. 4. Electric field intensity distribution of four junctions depletion regions in the device at 25 V bias voltage

Fig. 5. Spectral graph at 25 mA drive current

Fig. 6. Relationship between light intensity and driving current

Fig. 7. Relationship between driving current and driving voltage