Design and Realization of a Novel Poly-Silicon Light-Emitting Device Based on Standard CMOS Technology

Ai Kang; Cheng Junji; Zhu Kunfeng; Wu Kejun; Liu Zhongyuan; Liu Zhiwei; Zhao Jianming; Huang Lei; Xu Kaikai

doi:10.3788/CJL202047.0701027

Chinese Journal of Lasers, Volume. 47, Issue 7, 701027(2020)

Design and Realization of a Novel Poly-Silicon Light-Emitting Device Based on Standard CMOS Technology

Ai Kang¹, Cheng Junji¹, Zhu Kunfeng², Wu Kejun¹, Liu Zhongyuan³, Liu Zhiwei¹, Zhao Jianming¹, Huang Lei², and Xu Kaikai^1、*

Author Affiliations

¹State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China

²The 24th Research Institute of China Electronics Technology Group Corporation, Chongqing, Sichuan 400060, China

³The 44th Research Institute of China Electronics Technology Group Corporation, Chongqing, Sichuan 400060, China

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Ai Kang, Cheng Junji, Zhu Kunfeng, Wu Kejun, Liu Zhongyuan, Liu Zhiwei, Zhao Jianming, Huang Lei, Xu Kaikai. Design and Realization of a Novel Poly-Silicon Light-Emitting Device Based on Standard CMOS Technology[J]. Chinese Journal of Lasers, 2020, 47(7): 701027

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Paper Information

Special Issue:

Received: Jan. 10, 2020

Accepted: --

Published Online: Jul. 10, 2020

The Author Email: Xu Kaikai (kaikaix@uestc.edu)

DOI:10.3788/CJL202047.0701027

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology