Chinese Journal of Lasers, Volume. 49, Issue 23, 2301006(2022)
Annihilation Mechanism of Antiphase Domains in GaAs/Si(001) Materials Grown by Molecular Beam Epitaxy
Fig. 2. Formation energy of APDs propagating along {110}, {111} and {112} planes in GaAs materials
Fig. 3. Formation energy of APDs propagating along different crystal planes in GaAs materials versus temperature
Fig. 4. AFM images of samples grown under different temperatures. (a) Sample A; (b) sample B; (c) sample C
Fig. 5. APD density and surface roughness versus growth temperature of high-temperature GaAs layer
Fig. 6. TEM images of sample A and sample B. (a) TEM dark-field image of sample A; (b) cross-section morphology of sample A; (c) TEM bright-field image of sample B; (d) TEM dark-field image of sample B
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Chunyang Xiao, Jun Wang, Jiachen Li, Haijing Wang, Yanxing Jia, Bojie Ma, Zhuoliang Liu, Rui Ming, Yiming Bai, Yongqing Huang, Xiaomin Ren, Shuai Luo, Haiming Ji. Annihilation Mechanism of Antiphase Domains in GaAs/Si(001) Materials Grown by Molecular Beam Epitaxy[J]. Chinese Journal of Lasers, 2022, 49(23): 2301006
Category: laser devices and laser physics
Received: Dec. 27, 2021
Accepted: Mar. 25, 2022
Published Online: Oct. 31, 2022
The Author Email: Wang Jun (wangjun12@bupt.edu.cn)