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Chinese Journal of Lasers, Volume. 49, Issue 23, 2301006(2022)

Annihilation Mechanism of Antiphase Domains in GaAs/Si(001) Materials Grown by Molecular Beam Epitaxy

Chunyang Xiao1, Jun Wang1、*, Jiachen Li1, Haijing Wang1, Yanxing Jia1, Bojie Ma1, Zhuoliang Liu1, Rui Ming1, Yiming Bai2, Yongqing Huang1, Xiaomin Ren1, Shuai Luo3, and Haiming Ji3
Author Affiliations
  • 1State Key Laboratory of Information Photonics and Optical Communications, School of Electronic Engineering, Beijing University of Posts and Telecommunications , Beijing 100876, China
  • 2State Key Laboratory of New Energy Power System, North China Electric Power University, Beijing 102206, China
  • 3Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    Article index updated: Mar. 10, 2025

    The article is cited by 2 article(s) CLP online library. (Some content might be in Chinese.)
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    Chunyang Xiao, Jun Wang, Jiachen Li, Haijing Wang, Yanxing Jia, Bojie Ma, Zhuoliang Liu, Rui Ming, Yiming Bai, Yongqing Huang, Xiaomin Ren, Shuai Luo, Haiming Ji. Annihilation Mechanism of Antiphase Domains in GaAs/Si(001) Materials Grown by Molecular Beam Epitaxy[J]. Chinese Journal of Lasers, 2022, 49(23): 2301006

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    Paper Information

    Category: laser devices and laser physics

    Received: Dec. 27, 2021

    Accepted: Mar. 25, 2022

    Published Online: Oct. 31, 2022

    The Author Email: Wang Jun (wangjun12@bupt.edu.cn)

    DOI:10.3788/CJL202249.2301006

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology