Chinese Optics Letters, Volume. 13, Issue 3, 031401(2015)

Metamorphic growth of 1.55  μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates

小波 李1, 永清 黄1、*, 俊 王1, 晓峰 段1, 瑞康 张2, 弘 李业1, 正 刘1, 琦 王1, 霞 张1, and 晓敏 任1、**
Author Affiliations
  • 1Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications (BUPT); State Key Laboratory of Information Photonics and Optical Communications (BUPT), Beijing 100876, China
  • 2Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • show less
    References(23)

    [4] Z. Xiong, Q. Wang, Z. G. Jia, Y. Q. Huang, X. M. Ren. Proc. SPIE, 8555, 85550Y(2012).

    [12] D. Xiong, X. Ren, Q. Wang, J. Zhou, W. Shu, J. Lü, S. Cai, H. Huang, Y. Huang. Chin. Opt. Lett., 5, 422(2007).

    [13] L. J. Sun, H. Huang, J. H. Lü, S. W. Cai, W. W. Luo, Q. Wang, Y. Q. Huang, X. M. Ren. Semicond. Technol., 134, 442(2009).

    [18] S. R. Bank, H. P. Bse, H. B. Yuen, L. L. Goddard, M. A. Wistey, T. Sarmiento, J. S. Harris. Proceedings of OFC, OThN6(2006).

    [20] L. Y. Karachinsky, T. Kettler, I. I. Novikov, Y. M. Shernyakov, N. Y. Gordeev, M. V. Maximov, N. V. Kryzhanovskaya, A. E. Zhukov, E. S. Semenova, A. P. Vasil’ev, V. M. Ustinov, G. Fio, M. Kuntz, A. Lochmann, O. Schulz, L. Reissmann, K. Posilovic, A. R. Kovsh, S. S. Mikhrin, V. A. Shchukin, N. N. Ledentsov, D. Bimberg. Semicond. Sic. Technol., 21, 691(2006).

    CLP Journals

    [1] Yan Jia, Qingnan Yu, Fang Li, Mingqing Wang, Wei Lu, Jian Zhang, Xing Zhang, Yongqiang Ning, Jian Wu, "Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure," Chin. Opt. Lett. 16, 011402 (2018)

    [2] Wenyu Cao, Xiaodong Hu, "Influence of the quantum-confined Stark effect on the temperature-induced photoluminescence blueshift of InGaN/GaN quantum wells in laser diode structures," Chin. Opt. Lett. 14, 061402 (2016)

    Cited By
    Tools

    Get Citation

    Copy Citation Text

    小波 李, 永清 黄, 俊 王, 晓峰 段, 瑞康 张, 弘 李业, 正 刘, 琦 王, 霞 张, 晓敏 任, "Metamorphic growth of 1.55  μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates," Chin. Opt. Lett. 13, 031401 (2015)

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Lasers and Laser Optics

    Received: Sep. 29, 2014

    Accepted: Nov. 14, 2014

    Published Online: Sep. 25, 2018

    The Author Email: 永清 黄 (yqhuang@bupt.edu.cn), 晓敏 任 (xmren@bupt.edu.cn)

    DOI:10.3788/COL201513.031401

    Topics