Metamorphic growth of 1.55  μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates

小波 李; 永清 黄; 俊 王; 晓峰 段; 瑞康 张; 弘 李业; 正 刘; 琦 王; 霞 张; 晓敏 任

doi:10.3788/COL201513.031401

Chinese Optics Letters, Volume. 13, Issue 3, 031401(2015)

Metamorphic growth of 1.55 μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates

小波李¹, 永清黄^1、*, 俊王¹, 晓峰段¹, 瑞康张², 弘李业¹, 正刘¹, 琦王¹, 霞张¹, and 晓敏任^1、**

¹Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications (BUPT); State Key Laboratory of Information Photonics and Optical Communications (BUPT), Beijing 100876, China

²Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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小波李, 永清黄, 俊王, 晓峰段, 瑞康张, 弘李业, 正刘, 琦王, 霞张, 晓敏任, "Metamorphic growth of 1.55 μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates," Chin. Opt. Lett. 13, 031401 (2015)

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Paper Information

Category: Lasers and Laser Optics

Received: Sep. 29, 2014

Accepted: Nov. 14, 2014

Published Online: Sep. 25, 2018

The Author Email: 永清黄 (yqhuang@bupt.edu.cn), 晓敏任 (xmren@bupt.edu.cn)

DOI:10.3788/COL201513.031401

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology