Fig. 1. Structures schematic of laser epilayers and growth process on GaAs substrates.

Fig. 2. Rocking curve (ω−2θ scan) of MQWs laser on GaAs substrate (solid line) and on InP substrate (dotted line) in the GaAs (004) reflection. Inset shows RT PL photoluminescence spectrum of MQWs for InP/GaAs laser after removing the surface layers.

Fig. 3. Measured carrier concentration profiles of MQWs InP/GaAs laser material by ECV. Inset shows the hole concentration of p-type contact layer and part of cladding layer.

Fig. 4. (a) Cross-sectional TEM images of epilayers on GaAs substrate; (b) TEM images of active regions and (c) TEM images of active regions with dislocations.

Fig. 5. (a) Schematic structures of the device with 50 μm strip. (b) A single emitter laser. Inset shows the individual chip of the laser diode.

Fig. 6. Typical curves of output power and voltage versus injection current for the emitter laser at RT. The threshold current is 476 mA. Inset (a) shows optical spectrum taken at 400 mA. Inset (b) shows optical spectrum taken at 1.5-times threshold (700 mA). The ordinate values of the Inset (a) and Inset (b) are normalized intensity.

Fig. 7. Vertical far field distribution of the device at 700 mA.

Fig. 8. Light-output power at RT and 600 mA as a function of time during the ACC aging tests with a driving current of 600 mA. Inset shows the aging test in the first 200 h.