The physical model，structural fabrication，and DC testing of lateral gate transistor terahertz detectors

Ya-Ru KANG; Hui DONG; Jing LIU; Zhen HUANG; Zhao-Feng LI; Wei YAN; Xiao-Dong WANG

doi:10.11972/j.issn.1001-9014.2024.04.012

Journal of Infrared and Millimeter Waves, Volume. 43, Issue 4, 526(2024)

The physical model，structural fabrication，and DC testing of lateral gate transistor terahertz detectors

Ya-Ru KANG^1,3, Hui DONG⁴, Jing LIU³, Zhen HUANG⁵, Zhao-Feng LI^1,2,3、*, Wei YAN^3、**, and Xiao-Dong WANG^1,2,3

Author Affiliations

¹School of Integrated Circuits，University of Chinese Academy of Sciences，Beijing 100049，China

²Center of Materials Science and Optoelectronics Engineering，University of Chinese Academy of Sciences，Beijing 100049，China

³Engineering Research Center for Semiconductor Integrated Technology，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China

⁴School of Microelectronics，University of Science and Technology of China，Hefei 230026，China

⁵Research Center，HuBei Jiufengshan Laboratory，Wuhan 430074，China

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Figures & Tables(11)

Fig. 1. Schematic diagram of the device structure：(a) side gate HEMT; (b) conventional HEMT^[18]

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Fig. 2. Schematic diagram of side gate GaN/AlGaN HEMT

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Fig. 3. Contact band diagram of metal and 2DEG^［19］

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Fig. 4. Flow chart of side gate prepared based on self-alignment process

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Fig. 5. SEM photo of the side gate after the dissection：(a) 200 nm gate structure; (b) 800 nm gate structure; (c) 1 400 nm gate structure

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Fig. 6. Side gate GaN/AlGaN HEMT block diagram：（a） overall diagram；（b） local diagram

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Fig. 7. Transfer characteristic curve

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Fig. 8. Fitting curve：(a) linearity curve；(b) quadratic curve

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Fig. 9. Traditional HEMT transfer characteristic curve

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Table 1. Compare physical models of lateral gate HEMT with traditional HEMT and JFET

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Table 1. Compare physical models of lateral gate HEMT with traditional HEMT and JFET

器件类别	耗尽层宽度l	阈值电压V_th	响应电流I_D	本征等离子体波频率f₀
侧栅HEMT	$l = \frac{2 ε_{0} ε V}{q n_{s 0}}$	$V_{t h} = V_{b i} - \frac{q n_{s 0} W}{4 ε_{0} ε}$	$I_{D} = \frac{q μ n_{s 0}}{L} [W - \frac{4 ε_{0} ε (V_{b i} - V_{g})}{q n_{s 0}}] V_{d s} - \frac{2 ε_{0} ε μ}{L} {V_{d s}}^{2}$	$f_{0} = \frac{1}{4 L} \sqrt[]{\frac{q^{2} n_{s 0} l}{2 ε_{0} ε m}}$
传统HEMT	耗尽层宽度远小于d，可忽略不计	$V_{t h} = \frac{q n_{s 0} d}{ε_{0} ε}$	$I_{D} = \frac{W μ ε_{0} ε}{L d} [(V_{g} - V_{t h}) V_{d s} - \frac{1}{2} {V_{d s}}^{2}]$	$f_{0} = \frac{1}{4 L} \sqrt[]{\frac{q^{2} n_{s 0} d}{ε_{0} ε m}}$
金-半接触JFET	$l = {(\frac{2 ε_{0} ε V}{q N_{D}})}^{\frac{1}{2}}$	$V_{t h} = V_{b i} - \frac{q N_{D} W^{2}}{8 ε_{0} ε}$	$I_{D} = \frac{q μ N_{D}}{L} [W - \sqrt[]{\frac{8 ε_{0} ε (V_{b i} - V_{g})}{q N_{D}}}] V_{d s} - \frac{2 μ \sqrt[]{8 ε_{0} ε q N_{D}}}{3 L} {V_{d s}}^{\frac{3}{2}}$	$f_{0} = \frac{1}{4 L} \sqrt[]{\frac{q^{2} N_{D} l}{2 ε_{0} ε m}}$

Table 2. Relevant parameters of the bilateral gate AlGaN/GaN HEMT
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Table 2. Relevant parameters of the bilateral gate AlGaN/GaN HEMT
二维电子气面密度
n_s₀ /（cm^-2）
真空介电常数
ε₀ /（F/m）
GaN介电常数ε_GaN
电子电荷量
q /C
2×10¹¹ 8.85×10^-12 5.35 1.6×10^-19

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Ya-Ru KANG, Hui DONG, Jing LIU, Zhen HUANG, Zhao-Feng LI, Wei YAN, Xiao-Dong WANG. The physical model，structural fabrication，and DC testing of lateral gate transistor terahertz detectors[J]. Journal of Infrared and Millimeter Waves, 2024, 43(4): 526

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