Fig. 1. Section view of pixel unit in 4T PPD type CMOS image sensor^［20］

Fig. 2. Transient bright spot and lines induced by proton irradiation. (a) Transient bright spot; (b), (c), (d) transient bright lines

Fig. 3. Particle incident trajectory. (a) Charged particle incident trajectory; (b) proton incident trajectory

Fig. 4. Generation mechanism of CIS dark current

Fig. 5. Dark signal output images under different radiation fluences with bias voltage of 5 V. (a) Before irradiation; (b) proton fluence is 1×10¹⁰ p/cm²; (c) proton fluence is 5×10¹⁰ p/cm²; (d) proton fluence is 1×10¹¹ p/cm²

Fig. 6. Relationship between dark signal and proton radiation fluence with and without bias voltage

Fig. 7. Curve of dark signal varying with proton irradiation fluence

Fig. 8. Distribution of pixel counts of dark signal under different proton radiation fluences

Fig. 9. 3D distributions of dark signal spike before and after proton radiation. (a) Before radiation; (b) proton fluence is 1×10¹⁰ p/cm²; (c) proton fluence is 5×10¹⁰ p/cm²; (d) proton fluence is 1×10¹¹ p/cm²

Fig. 10. Typical two-level defects in CIS induced by proton radiation

Fig. 11. Typical multi-level defects in CIS induced by proton radiation