Chinese Journal of Lasers, Volume. 46, Issue 10, 1003001(2019)
Preparation of Low-Resistivity GZO Thin Films Using Pulsed Laser Deposition and Investigation of Optoelectronic Properties
Figures & Tables(6)
Fig. 2. AFM images of GZO films deposited under different oxygen pressures. (a) 0 Pa; (b) 0.5 Pa; (c) 1.0 Pa; (d) 5.0 Pa
Fig. 3. Resistivity of GZO film, carrier density, and Hall mobility vary with oxygen pressure. (a) Resistivity varies with oxygen pressure; (b) carrier density and Hall mobility vary with oxygen pressure
Table 1. Microstructure parameters of GZO films under different oxygen pressures
View tableTable 1. Microstructure parameters of GZO films under different oxygen pressures
Oxygen pressures /Pa Thickness /nm 2 θ /(°)w 1/2 /(°)Lattice constant / (10-10 m) Crystal size /nm RMS /nm 0 139 34.87 0.386 5.1416 20.84 1.4 0.5 243 34.95 0.238 5.1302 33.80 3.9 1.0 264 34.97 0.25 5.1274 32.18 3.5 5.0 294 35.04 0.366 5.1174 21.98 1.8
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Guankong Mo, Jiahui Liu, Zhuoliang Zou, Zimei Tang, Yulun Liu, Huan He, Yuechun Fu, Xiaoming Shen. Preparation of Low-Resistivity GZO Thin Films Using Pulsed Laser Deposition and Investigation of Optoelectronic Properties[J]. Chinese Journal of Lasers, 2019, 46(10): 1003001
Paper Information
Category: materials and thin films
Received: Apr. 15, 2019
Accepted: Jun. 5, 2019
Published Online: Oct. 25, 2019
The Author Email: Shen Xiaoming (docsjh@ gxu.edu.cn)
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