Ga-doped ZnO (GZO) transparent conductive thin films are deposited on glass substrates via the pulsed laser deposition method; further, the influence of oxygen pressure on the structure, surface morphology, and photoelectric properties of the GZO thin film is systematically investigated using X-ray diffractometer, ultraviolet-visible spectroscopy, atomic force microscopy, and Hall test system. Results show that all the samples exhibit a hexagonal wurtzite structure with a preferred orientation along the c-axis. Homogeneous, dense, and compact surfaces are obtained for all the GZO films. The crystal size initially increases and then decreases with the increasing oxygen pressure; optimum crystallinity is observed at an oxygen pressure of 0.5 Pa. The prepared GZO films exhibit a transmittance higher than 91.97% in the visible region; the band gap of the GZO film is 3.492-3.576 eV. The carrier density and Hall mobility initially increase and then decrease with the increasing oxygen pressure. The resistivity initially decreases when the oxygen pressure increases. However, with a further increase in the oxygen pressure, the resistivity increases. The minimum resistivity of 2.95×10 ^-4 Ω·cm is observed when the oxygen pressure is 0.5 Pa.