[1] Schattenburg M L, Chen C, Everett P N et al. Sub-100 nm metrology using interferometrically produced fiducials[J]. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 17, 2692-2697(1999). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4970832

[2] Konkola P T. Design and analysis of a scanning beam interference lithography system for patterning gratings with nanometer-level distortions[D]. Cambridge: Massachusetts Institute of Technology, 31-32(2003).

[3] Pati G S, Heilmann R K, Konkola P T et al. Generalized scanning beam interference lithography system for patterning gratings with variable period progressions[J]. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 20, 2617-2621(2002). http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=4972701

[4] Chen C G, Konkola P T, Heilmann R K et al. Nanometer-accurate grating fabrication with scanning beam interference lithography[C]. SPIE, 4936, 126-134(2002).

[5] Wang L J. Research on the phase-shifting locking technology for scanning interference lithography with nanometer accuracy[D]. Beijing: Tsinghua University, 11-12(2016).

[6] Chen C G, Konkola P T, Heilmann R K et al. Image metrology and system controls for scanning beam interference lithography[J]. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 19, 2335-2341(2001). http://scitation.aip.org/content/avs/journal/jvstb/19/6/10.1116/1.1409379

[7] Chen C G. Beam alignment and image metrology for scanning beam interference lithography: fabricating gratings with nanometer phase accuracy[D]. Cambridge: Massachusetts Institute of Technology, 58-61(2003).

[8] Jiang S. Study on measurement and adjustment of interference fringe for scanning beam interference lithography system[D]. Beijing: University of Chinese Academy of Sciences, 21-23(2015).

[9] Han J. Bayanheshig, Li W H. The ratio choice method of the pinhole aperture to the waist of the Gaussian laser in the fabrication of holographic gratings[J]. Acta Physica Sinica, 61, 084202(2012).

[10] Siegman A E. Lasers[M]. Mill Valley: University Science Books, 663(1986).

[11] Ferrera J, Schattenburg M L, Smith H I. Analysis of distortion in interferometric lithography[J]. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 14, 4009-4013(1996). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4968928

[12] Ferrera J. Nanometer-scale placement in electron-beam lithography[D]. Cambridge: Massachusetts Institute of Technology, 49-55(2000).

[13] Lu S, Yang K M, Zhu Y et al. Interference fringe phase locking system[J]. Optics and Precision Engineering, 25, 1-7(2017).

[14] Mahajan V N. Axial irradiance and optimum focusing of laser beams[J]. Applied optics, 22, 3042-3053(1983). http://www.ncbi.nlm.nih.gov/pubmed/18200151

[15] Mahajan V N[M]. Optical imaging and aberrations, part II: Wave diffraction optics, 5-10(2011).

[16] Dickson L D. Characteristics of a propagating Gaussian beam[J]. Applied Optics, 9, 1854-1861(1970). http://www.opticsinfobase.org/abstract.cfm?id=16501

[17] Belland P, Crenn J P. Changes in the characteristics of a Gaussian beam weakly diffracted by a circular aperture[J]. Applied Optics, 21, 522-527(1982). http://www.opticsinfobase.org/ao/fulltext.cfm?uri=ao-21-3-522

[18] Wang W, Jiang S, Song Y et al. Design of spot size and optical path in scanning beam interference lithography system[J]. Chinese Journal of Lasers, 44, 0905002(2017).