Journal of Synthetic Crystals, Volume. 54, Issue 6, 942(2025)
Effect of Cable Diameter on Growth Stability of Large-Size Czochralski Silicon Crystals
Fig. 1. Structure of the crystal pulling module. (a) Seed crystal; (b) graphite chuck nested with the seed crystal; (c) threaded connection port of the graphite chuck; (d) steel-molybdenum counterweight; (e) pulling cable; (f) fully assembled pulling apparatus; (g) neck portion of the seed crystal; (h) grown crystal
Fig. 2. Modeling of the seed crystal structure with a neck portion
Fig. 3. Photographs of seed crystals in the early growth stage. (a) 4 mm diameter cable with 18 kg counterweight; (b) 5.5 mm diameter cable with 18 kg counterweight; (c) 5.5 mm diameter cable with 27 kg counterweight
Fig. 4. Abnormal crystal growth phenomena induced by seed crystal tilting. (a) Crystal head with curved ridge lines; (b) fractured crystal using 5.5 mm diameter cable and 18 kg counterweight
Fig. 5. Stress distribution (a)~(c) and numerical distribution (d) in the neck region of 0°, 2°, 4° tilt angles during the pulling of a 400 kg crystal
Fig. 6. Surface stress distribution in the neck region of 0° (a), 2° (b), 4° (c) tilt angles during the pulling of a 400 kg crystal
Fig. 7. Comparison of maximum central and surface stresses of the seed crystal with varying tilt angles
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Litao ZHU, Lei LIU, Shuai YUAN, Shenglang ZHOU, Huali ZHANG, Chen WANG, Yu GAO, Jianwei CAO, Xuegong YU, Deren YANG. Effect of Cable Diameter on Growth Stability of Large-Size Czochralski Silicon Crystals[J]. Journal of Synthetic Crystals, 2025, 54(6): 942
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Received: Mar. 1, 2025
Accepted: --
Published Online: Jul. 8, 2025
The Author Email: Shuai YUAN (shuaiyuan@zju.edu.cn), Deren YANG (mseyang@zju.edu.cn)