Effects of various substrate materials on structural and optical properties of amorphous silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition

Liangyi Hang; Weiguo Liu; Junqi Xu

doi:10.3788/COL202018.083101

Chinese Optics Letters, Volume. 18, Issue 8, 083101(2020)

Effects of various substrate materials on structural and optical properties of amorphous silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition

Liangyi Hang^*, Weiguo Liu^**, and Junqi Xu

Author Affiliations

Shaanxi Provincial Key Laboratory of Thin Films Technology and Optical Test, Xi’an Technological University, Xi’an 710021, China

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Figures & Tables(8)

Fig. 1. Schematic of RF-PECVD coating system used in this study.

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Fig. 2. XRD patterns of ${SiN}_{x}$ thin films formed by PECVD method on (a) Si and (b) glass and fused silica (FS).

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Fig. 3. High-resolution XPS spectra of ${SiN}_{x}$ films formed on Si, glass (G), and FS substrates: (a) Si 2p spectra; (b) N 1s spectra.

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$Optical constants of SiNx films formed on different substrates: (a) refractive index; (b) extinction coefficient.$

Fig. 4. Optical constants of ${SiN}_{x}$ films formed on different substrates: (a) refractive index; (b) extinction coefficient.

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Fig. 5. Deposition rates and physical thicknesses of ${SiN}_{x}$ films deposited on various substrates.

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Fig. 6. Transmittances of ${SiN}_{x}$ films: (a) ${SiN}_{x 2}$ on glass; (b) ${SiN}_{x 3}$ on FS.

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Table 1. Relative Atomic Concentrations of Si and N of ${SiN}_{x}$ Films Deposited on Various Substrates, Obtained by XPS
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Table 1. Relative Atomic Concentrations of Si and N of ${SiN}_{x}$ Films Deposited on Various Substrates, Obtained by XPS
Samples Silicon (%) Nitrogen (%) Uncertainty (%)
${SiN}_{x 1}$ 48 52 ±4
${SiN}_{x 2}$ 46 54 ±4
${SiN}_{x 3}$ 46 54 ±4

Table 2. Binding Energies of All the Possible Chemical Bonds in Regions Si $2 p$
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Table 2. Binding Energies of All the Possible Chemical Bonds in Regions Si $2 p$
No. Tetrahedron Bonding Unit $E_{B}$ ^a (eV) of Si $2 p$
1 $Si - {Si}_{3} N$ ${Si}_{3} N$ 100.30
2 $Si - {Si}_{2} N_{2}$ ${Si}_{3} N_{2}$ 101.00
3 $Si - {SiN}_{3}$ SiN 101.70
4 $Si - N_{4}$ ${Si}_{3} N_{4}$ 102.40

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Liangyi Hang, Weiguo Liu, Junqi Xu, "Effects of various substrate materials on structural and optical properties of amorphous silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition," Chin. Opt. Lett. 18, 083101 (2020)

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Paper Information

Category: Thin Films and Optics at Surfaces

Received: Apr. 2, 2020

Accepted: Jun. 10, 2020

Posted: Jun. 10, 2020

Published Online: Jul. 14, 2020

The Author Email: Liangyi Hang (lyhang999@163.com), Weiguo Liu (wgliu@163.com)

DOI:10.3788/COL202018.083101

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Relative Atomic Concentrations of Si and N of SiNx Films Deposited on Various Substrates, Obtained by XPS

Table 1. Relative Atomic Concentrations of Si and N of SiNx Films Deposited on Various Substrates, Obtained by XPS

Table 2. Binding Energies of All the Possible Chemical Bonds in Regions Si 2p

Table 2. Binding Energies of All the Possible Chemical Bonds in Regions Si 2p

Table 1. Relative Atomic Concentrations of Si and N of ${SiN}_{x}$ Films Deposited on Various Substrates, Obtained by XPS

Table 1. Relative Atomic Concentrations of Si and N of ${SiN}_{x}$ Films Deposited on Various Substrates, Obtained by XPS

Table 2. Binding Energies of All the Possible Chemical Bonds in Regions Si $2 p$

Table 2. Binding Energies of All the Possible Chemical Bonds in Regions Si $2 p$